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Advanced high performance in- -package Doherty Greater negative gate- -source voltage range for improved Class C operation Designed for digital predistortion error correction systems Document Number: A3V09H521- -24S Rev. 0, 02/2019 NXP Semiconductors Technical Data 720–960 MHz, 107 W AVG., 48 V AIRFAST RF POWER LDMOS TRANSISTOR A3V09H521- -24SR6 NI- -1230S- -4L2L Figure 1. Pin Connections
- Device cannot operate with VDD current
supplied through pin 3 and pin 6.
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available athttp://www.nxp.com/RF/calculators
- Each side of device measured separately.
Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) in 3.84 MHz Channel Bandwidth @5M H zO f f s e t . Table 5. Ordering Information
- Part internally matched both on input and output.
- Measurement made with device in an asymmetrical Doherty configuration.
- P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W- -CDMA single- -carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
Figure 2. A3V09H521- -24SR6 Test Circuit Component Layout Table 6. A3V09H521- -24SR6 Test Circuit Component Designations and Values
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go tohttp://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2019 Initial release of data sheet
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