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Technical content

Features

 Advanced high performance in- -package Doherty  Designed for wide instantaneous bandwidth applications  Greater negative gate- -source voltage range for improved Class C operation  Able to withstand extremely high output VSWR and broadband operating conditions  Designed for digital predistortion error correction systems Document Number: A3T23H450W23S Rev. 0, 08/2018 NXP Semiconductors Technical Data 2300–2400 MHz, 87 W AVG., 30 V AIRFAST RF POWER LDMOS TRANSISTOR A3T23H450W23SR6 ACP- -1230S- -4L2S 1. Pin connections 4 and 5 are DC coupled and RF independent. 2. Device can operate with V DD current supplied through pin 3 and pin 6. Figure 1. Pin Connections

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available athttp://www.nxp.com/RF/calculators
  3. Side A and Side B are tied together for these measurements.

Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) in 3.84 MHz Channel Bandwidth @5M H zO f f s e t . Table 5. Ordering Information

  1. VDDA and VDDB must be tied together and powered by a single DC power supply.
  2. Part internally matched both on input and output.
  3. Measurements made with device in an asymmetrical Doherty configuration.

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

Figure 2. A3T23H450W23SR6 Test Circuit Component Layout aaa-030961Note: VDDA and VDDB must be tied together and powered by a single DC power supply. Table 6. A3T23H450W23SR6 Test Circuit Component Designations and Values

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go tohttp://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Aug. 2018  Initial release of data sheet

Information in this document is provided solely to enablesystem and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, orguarantee regarding the suitability of its products for any particularpurpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address:nxp.com/ SalesTermsandConditions. NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Document Number: A3T23H450W23S Rev. 0, 08/2018