AFT05MS031N FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Characterized for Operation from 136 to 520 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band: − 136- -174 MHz − 380- -450 MHz − 450- -520 MHz
  • 225°C Capable Plastic Package
  • Exceptional Thermal Performance
  • High Linearity for: TETRA, SSB, LTE
  • Cost- -effective Over- -molded Plastic Packaging
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel. Typical Applications
  • Output Stage VHF Band Mobile Radio
  • Output Stage UHF Band Mobile Radio Document Number: AFT05MS031N Rev. 0, 6/2012 Freescale Semiconductor Technical Data 136- -520 MHz, 31 W, 13.6 V WIDEBAND RF POWER LDMOS TRANSISTORS AFT05MS031NR1 AFT05MS031GNR1 T O -- 2 7 0 -- 2 PLASTIC AFT05MS031NR1

Figure 1. Pin Connections source terminal for the transistor. © Freescale Semiconductor, Inc., 2012.All rights reserved.

Freescale Semiconductor, Inc. Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf

Select Documentation/Application Notes - - AN1955.

Freescale Semiconductor, Inc. Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued)

520 CW >65:1 at all Phase Angles 47

17 No Device Degradation

  1. Measurement made with device in straight leadconfiguration before any lead forming operation is applied. Lead forming is used for gull

Freescale Semiconductor, Inc. Figure 2. Capacitance versus Drain- -Source Voltage Figure 3. Drain Current versus Drain- -Source Voltage Note: Measured with both sides of the transistor tied together.

3.5 Vdc

3.25 Vdc

2.75 Vdc

Figure 4. MTTF versus Junction Temperature - - CW under indicated test conditions.

3.75 Vdc

3.2 Amps

3.9 Amps

Freescale Semiconductor, Inc.

520 MHz NARROWBAND PRODUCTION TEST FIXTURE

Figure 5. AFT05MS031NR1 Narrowband Test Circuit Component Layout — 520 MHz Table 6. AFT05MS031NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz

Freescale Semiconductor, Inc. Figure 6. AFT05MS031NR1 Narrowband Test Circuit Schematic — 520 MHz Table 7. AFT05MS031NR1 Narrowband Test Circuit Microstrips — 520 MHz

Freescale Semiconductor, Inc. Table 8. 380- -450 MHz UHF Wideband Performance(13.6 Vdc, IDQ = 100 mA, TA =2 5°C, CW) Table 9. Load Mismatch/Ruggedness(In Freescale Reference Circuit)

420 CW >65:1 at all

17 No Device

Freescale Semiconductor, Inc. Figure 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 380- -450 MHz

  • C4 and C5 are mounted vertically.

Table 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 380- -450 MHz

Freescale Semiconductor, Inc. Figure 11. AFT05MS031NR1 UHF Wideband Reference Circuit Schematic — 380- -450 MHz Table 11. AFT05MS031NR1 UHF Wideband Reference Circuit Microstrips — 380- -450 MHz

Freescale Semiconductor, Inc. Figure 14. Output Power versus Gate- -Source Voltage Figure 15. Power Gain, Output Power and Drain

420 MHz

450 MHz

380 MHz

Freescale Semiconductor, Inc. Figure 16. UHF Wideband Series Equivalent Source and Load Impedance — 380- -450 MHz

Freescale Semiconductor, Inc. Table 12. 450- -520 MHz UHF Wideband Performance(13.6 Vdc, IDQ = 100 mA, TA =2 5°C, CW) Table 13. Load Mismatch/Ruggedness(In Freescale Reference Circuit)

490 CW >65:1 at all

Freescale Semiconductor, Inc. Figure 17. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 450- -520 MHz Table 14. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 450- -520 MHz

Freescale Semiconductor, Inc. Figure 18. AFT05MS031NR1 UHF Wideband Reference Circuit Schematic — 450- -520 MHz Table 15. AFT05MS031NR1 UHF Wideband Reference Circuit Microstrips — 450- -520 MHz

Freescale Semiconductor, Inc. Figure 21. Output Power versus Gate- -Source Voltage Figure 22. Power Gain, Output Power and Drain

490 MHz

520 MHz

520 MHz 520 MHz

Freescale Semiconductor, Inc. Figure 23. UHF Wideband Series Equivalent Source and Load Impedance — 450- -520 MHz

Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1 PACKAGE DIMENSIONS

AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc.

Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1

AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc.

Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1

AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc.

Freescale Semiconductor, Inc. AFT05MS031NR1 AFT05MS031GNR1 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes

  • AN1907: Solder Reflow Attach Method for High Power RF Devices in Over- -Molded Plastic Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- -Molded Plastic Packages
  • AN3789: Clamping of High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model
  • .s2p File Development Tools
  • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description

0 June 2012 • Initial Release of Data Sheet

AFT05MS031NR1 AFT05MS031GNR1 RF Device Data Freescale Semiconductor, Inc. Information in this document is provided solely to enablesystem and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does Freescale assume any liability arisingout of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/Freescale/Docs/TermsandConditions.htm. Freescale, the Freescale logo, AltiVec, C- -5, CodeTest, CodeWarrior, ColdFire, C- -Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge, QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2012 Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Document Number: AFT05MS031N Rev. 0, 6/2012