MD7IC18120N NXP | Alldatasheet
Document overview
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Technical content
Features
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large- -Signal Load- -Pull Parameters and Common Source S- -Parameters
- On- -Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
- Integrated ESD Protection
- Greater Negative Gate- -Source VoltageRange for Improved Class C Operation
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control 2. Peaking and Carrier orientation isdetermined by the test fixture design. Document Number: MD7IC18120N Rev. 0, 5/2010 Freescale Semiconductor Technical Data 1805- -1880 MHz, 30 W AVG., 28 V SINGLE W- -CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS MD7IC18120NR1 MD7IC18120GNR1 CASE 1866- -02 TO- -270 WBL- -16 PLASTIC MD7IC18120NR1 CASE 1867- -02 TO- -270 WBL- -16 GULL PLASTIC MD7IC18120GNR1
Figure 1. Functional Block Diagram Figure 2. Pin Connections the source terminal for the transistors. © Freescale Semiconductor, Inc., 2010.All rights reserved.
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Select Documentation/Application Notes - - AN1955.
Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)
- Each side of device measured separately.
- Part internally matched both on input and output.
- Measurement made with device in a Symmetrical Doherty configuration.
- Measurement made with device in straight lead configuration before anylead forming operation is applied.
Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued) Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @±5M H zO f f s e t .
- Measurement made with device in a Symmetrical Doherty configuration.
- Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control
Figure 3. MD7IC18120NR1(GNR1) Test Circuit Component Layout Table 6. MD7IC18120NR1(GNR1) Test Circuit Component Designations and Values
MD7IC18120NR1 MD7IC18120GNR1 λ λ λ λ λ λ Single- -ended Quadrature combined Doherty Push- -pull λ λ 4 λ λ Figure 4.Possible Circuit Topologies
Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 30 Watts Avg. Figure 6. Intermodulation Distortion Products Figure 7. Output Peak- -to- -Average Ratio
3.84 MHz Channel Bandwidth, Input Signal
Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single- -Carrier W- -CDMA Power Gain, Power Added Figure 9. Broadband Frequency Response
25 Gain
1805 MHz
1840 MHz
1880 MHz 1805 MHz
1880 MHz
1840 MHz 1805 MHz
3.84 MHz Channel Bandwidth
Figure 10. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @±5M H zO f f s e t .
3.84 MHz
Figure 11. Single- -Carrier W- -CDMA Spectrum
Figure 14. Pulsed CW Output Power NOTE: Measurement made on the Class AB, carrier side of the device.
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS
MD7IC18120NR1 MD7IC18120GNR1
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor
MD7IC18120NR1 MD7IC18120GNR1
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor
MD7IC18120NR1 MD7IC18120GNR1
MD7IC18120NR1 MD7IC18120GNR1 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
- AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the parts Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description
0 May 2010 • Initial Release of Data Sheet
MD7IC18120NR1 MD7IC18120GNR1 Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
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