A2I20D040N NXP | Alldatasheet
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Extremely Wide RF Bandwidth RF Decoupled Drain Pins Reduce Overall Board Space On- -Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function(2) 2. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987,Quiescent Current Control for the RF Integrated Circuit Device Family.Go tohttp://www.nxp.com/RF and search for AN1977 or AN1987. Document Number: A2I20D040N Rev. 0, 4/2016 Freescale Semiconductor Technical Data 1400–2200 MHz, 5 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS A2I20D040NR1 A2I20D040GNR1 TO- -270WB- -17 PLASTIC A2I20D040NR1 TO- -270WBG- -17 PLASTIC A2I20D040GNR1 Freescale Semiconductor, Inc., 2016. All rights reserved.
Freescale Semiconductor, Inc. Figure 1. Functional Block Diagram Figure 2. Pin Connections the source terminal for the transistors.
17 VBWA(2)
- Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated
Device Family.G ot ohttp://www.nxp.com/RF and search for AN1977 or AN1987.
- Device can operate with VDD current
supplied through pin 13 and pin 17. Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available athttp://www.nxp.com/RF/calculators.
Freescale Semiconductor, Inc. Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Each side of device measured separately.
Freescale Semiconductor, Inc. Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Pout = 5 W Avg., f = 1900 MHz, Single- -Carrier W- -CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @5M H zO f f s e t . Table 6. Ordering Information
- Part internally input and output matched.
- Measurements made with device in straight leadconfiguration before any lead forming operation is applied. Lead forming is used for gull
- All data measured in fixture with device soldered to heatsink.
- P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using anunclipped W- -CDMA single- -carrier input signal
where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
- Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987,Quiescent Current Control
for the RF Integrated Circuit Device Family.Go tohttp://www.nxp.com/RF and search for AN1977 or AN1987.
Freescale Semiconductor, Inc. Figure 3. A2I20D040NR1 Test Circuit Component Layout Table 7. A2I20D040NR1 Test Circuit Component Designations and Values
Freescale Semiconductor, Inc. Figure 4. Single- -Carrier Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 5 Watts Avg.
3.84 MHz Channel Bandwidth
Figure 5. Intermodulation Distortion Products Figure 6. Output Peak- -to- -Average Ratio
34.5 Gps, POWER GAIN (dB)
Freescale Semiconductor, Inc. Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain Figure 8. Broadband Frequency Response
2200 MHz
1800 MHz2000 MHz
2000 MHz
1800 MHz
Freescale Semiconductor, Inc. Table 8. Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Note: Measurement made on a per side basis. Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Note: Measurement made on a per side basis.
Freescale Semiconductor, Inc. Table 10. Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Note: Measurement made on a per side basis. Table 11. Load Pull Performance — Maximum Drain Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Note: Measurement made on a per side basis.
Freescale Semiconductor, Inc. A2I20D040NR1 A2I20D040GNR1 PACKAGE DIMENSIONS
A2I20D040NR1 A2I20D040GNR1 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. A2I20D040NR1 A2I20D040GNR1
A2I20D040NR1 A2I20D040GNR1 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. A2I20D040NR1 A2I20D040GNR1
A2I20D040NR1 A2I20D040GNR1 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. A2I20D040NR1 A2I20D040GNR1 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over- -Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go tohttp://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2016 Initial Release of Data Sheet
A2I20D040NR1 A2I20D040GNR1 RF Device Data Freescale Semiconductor, Inc. Information in this document is provided solely to enablesystem and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does Freescale assume any liability arisingout of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Document Number: A2I20D040N Rev. 0, 4/2016