MRF6VP11KHR6_10 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large- -Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 V DD Operation
  • Integrated ESD Protection
  • Designed for Push- -Pull Operation
  • Greater Negative Gate- -Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

Select Documentation/Application Notes - - AN1955.

42 RFoutB/VDSB

Figure 1. Pin Connections © Freescale Semiconductor, Inc., 2008- -2010.All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted)

  1. Each side of device measured separately.
  2. Measurement made with device in push- -pull configuration.

Figure 2. MRF6VP11KHR6 Test Circuit Schematic *Line length includes microstrip bends. Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values

Figure 3. MRF6VP11KHR6 Test Circuit Component Layout

gate to gate, balanced configuration. drain to drain, balanced configuration. Figure 15. Series Equivalent Source and Load Impedance

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Apr. 2008 • Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3.

  • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 July 2008 • Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6 3 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain- -Source Voltage, to denote that each side of device is measured separately, p. 5
  • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per- -side basis, p. 5
  • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased the MTTF factor accordingly, p. 6
  • Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 4 Dec. 2008 • Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”, p. 7 5 July 2009 • Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1
  • Changed “EKME630ELL471MK25S” part numberto “MCGPR63V477M13X26- -RH”, changed R1 Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and “CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component Designations and Values, p. 3
  • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from 70% to 72%, p. 6
  • Added Electromigration MTTF Calculator and RF HighPower Model availability to Product Documentation, Tools and Software, p. 20 6 Dec. 2009 • Device frequency range improved from 10- -150 MHz to 1.8- -150 MHz, p. 1
  • Reporting of pulsed thermal data now shown using the ZθJC symbol, Table 2. Thermal Characteristics, p. 1 7 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1

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