MRF6P27160H_08 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 V DD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF

Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.

  1. Each side of device measured separately.
  2. Part internally matched both on input and output.
  3. Measurement made with device in push-pull configuration.

Figure 1. MRF6P27160HR6 Test Circuit Schematic Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values

Figure 2. MRF6P27160HR6 Test Circuit Component Layout

Figure 12. MTTF versus Junction Temperature is operated at VDD = 28 Vdc, Pout = 35 W Avg., and ηD = 22.6%. Figure 13. Single-Carrier CCDF N-CDMA

1.2288 MHz

Figure 14. Single-Carrier N-CDMA Spectrum

Figure 15. Series Equivalent Source and Load Impedance gate to gate, balanced configuration. from drain to drain, balanced configuration.

NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.615 1.625 41.02 41.28 B 0.395 0.405 10.03 10.29 C 0.150 0.200 3.81 5.08 D 0.455 0.465 11.56 11.81 E 0.062 0.066 1.57 1.68 F 0.004 0.007 0.10 0.18 G 1.400 BSC 35.56 BSC H 0.082 0.090 2.08 2.29 K 0.117 0.137 2.97 3.48 L 0.540 BSC 13.72 BSC N 1.218 1.242 30.94 31.55 Q 0.120 0.130 3.05 3.30 R 0.355 0.365 9.01 9.27 A G L DK4X Q2X M 1.219 1.241 30.96 31.52 S 0.365 0.375 9.27 9.53 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF SEATING PLANE N C E M MAMaaa B MT B B (FLANGE) H F MAMccc B MT R (LID) S (INSULATOR) MAMbbb B MT A T MAMbbb B MT (INSULATOR) MAMccc B MT (LID) PIN 5 MAMbbb B MT NI-1230

Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 2 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2

  • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1
  • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1
  • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table; related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
  • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2
  • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2
  • Changed “Z2, Z31” to “Z2, Z30” and “Z3, Z30” to “Z3, Z31” in Z list for Fig. 1, Test Circuit Schematic, p. 3
  • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3
  • Adjusted scale for Fig. 5, Two-Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 5
  • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6
  • Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7
  • Added Product Documentation and Revision History, p. 10

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