MRF8S9102NR3 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large- -Signal Impedance Parameters and Common Source S- -Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate- -Source VoltageRange for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. Document Number: MRF8S9102N Rev. 0, 2/2011 Freescale Semiconductor Technical Data 865- -960 MHz, 28 W AVG., 28 V SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFET MRF8S9102NR3 CASE 2021- -03, STYLE 1 O M -- 7 8 0 -- 2 PLASTIC © Freescale Semiconductor, Inc., 2011.All rights reserved.

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf

Select Documentation/Application Notes - - AN1955.

  1. VGG =2xV GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued) Channel Bandwidth @±5M H zO f f s e t . Channel Bandwidth @±5M H zO f f s e t . Channel Bandwidth @±5M H zO f f s e t .

  1. Part internally matched both on input and output.

Figure 1. MRF8S9102NR3 Test Circuit Component Layout Table 6. MRF8S9102NR3 Test Circuit Component Designations and Values

Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single- -Carrier W- -CDMA Power Gain, Drain Figure 6. Broadband Frequency Response

920 MHz

940 MHz

960 MHz

Figure 7. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @±5M H zO f f s e t .

3.84 MHz

Figure 8. Single- -Carrier W- -CDMA Spectrum

Figure 9. Series Equivalent Source and Load Impedance

Figure 10. Pulsed CW Output Power

Figure 11. MRF8S9102NR3 Test Circuit Component Layout — 865- -895 MHz Table 7. MRF8S9102NR3 Test Circuit Component Designations and Values — 865- -895 MHz

Figure 12. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 28 Watts Avg.

3.84 MHz Channel Bandwidth

Pout, OUTPUT POWER (WATTS) AVG. Figure 13. Single- -Carrier W- -CDMA Power Gain, Drain

865 MHz

895 MHz 880 MHz

Figure 14. Broadband Frequency Response

880 MHz

895 MHz

Figure 15. Series Equivalent Source and Load Impedance — 865- -895 MHz

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes

  • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN3789: Clamping of High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model
  • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2011 • Initial Release of Data Sheet

Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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