MD7IC21100N_12 FREESCALE | Alldatasheet
Document overview
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- PDF pages: 22
Technical content
Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large- -Signal Impedance Parameters and Common Source S-Parameters
- On- -Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
- Internally Matched for Ease of Use
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function(1)
- Integrated ESD Protection
- 225°C Capable Plastic Package
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Figure 1. Functional Block Diagram Figure 2. Pin Connections the source terminal for the transistors.
- Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control
© Freescale Semiconductor, Inc., 2008, 2011- -2012.All rights reserved.
Freescale Semiconductor, Inc. Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf
Select Documentation/Application Notes - - AN1955.
- Each side of device measured separately.
Freescale Semiconductor, Inc. Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued) Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @±5M H zO f f s e t .
- Each side of device measured separately.
- Part internally matched both on input and output.
- Measurement made with device in a single- -ended configuration.
- Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control
Freescale Semiconductor, Inc. Figure 3. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit ComponentDesignations and Values
Freescale Semiconductor, Inc. Figure 4. MD7IC21100NR1(GNR1)(NBR1) Test Circuit Component Layout
Freescale Semiconductor, Inc. Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) versus Broadband Performance @ Pout = 32 Watts Avg. Figure 6. Power Gain versus Output Power Figure 7. Power Gain versus Output Power Figure 8. Intermodulation Distortion Products
3.84 MHz Channel Bandwidth
Freescale Semiconductor, Inc. Figure 9. Output Peak- -to- -Average Ratio Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single- -Carrier W- -CDMA Power Gain, Drain Figure 11. Broadband Frequency Response
3.84 MHz Channel Bandwidth, Input Signal
Freescale Semiconductor, Inc. Figure 12. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @±5M H zO f f s e t .
3.84 MHz
Figure 13. Single- -Carrier W- -CDMA Spectrum
Freescale Semiconductor, Inc. (1) Both 50 Ω inputs in parallel as per the product test fixture. Figure 14. Series Equivalent Source and Load Impedance
Freescale Semiconductor, Inc. Table 7. Common Source S- -Parameters(VDD =2 8V ,IDQ1A +I DQ1B = 190 mA, IDQ2A +I DQ2B = 925 mA, TA =2 5°C, 50 Ohm System)
Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 PACKAGE DIMENSIONS
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over- -Molded Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
- AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
- AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- -Molded Plastic Packages
- AN3789: Clamping of High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
- Electromigration MTTF Calculator
- RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the parts Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2008 • Initial Release of Data Sheet 1 June 2011 • Changed ESD Human Body Model rating from Class 1C to Class 0 to reflect recent ESD test results of the device, p. 2
- Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the devices MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
- Fig. 14, CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal and Fig. 15, Single- -Carrier W- -CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Fig. 13 and Fig. 14 after Fig. 13 removed)
- Added AN3789, Clamping of High Power RF Transistors and RFICs in Over- -Molded Plastic Packages to Product Documentation, Application Notes, p. 21
- Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 21 2 Feb. 2012 • Table 3, ESD Protection Characteristics, removed the word Minimum after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to beused as a guideline when handling ESD sensitive devices, p. 2
- Corrected bias conditions throughout the data sheet to reflect the true testing methodology. Changed IDQ1A =I DQ1B = 190 mA to IDQ1A +I DQ1B = 190 mA and changed IDQ2A =I DQ2B = 925 mA to IDQ2A +I DQ2B = 925 mA.
- Removed Fig. 5, Possible Circuit Topologies, and renumbered all subsequent figures, p. 5- -10
Freescale Semiconductor, Inc. MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1 Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2011- -2012. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
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