MRF6V4300NBR5 FREESCALE | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Features
- Characterized with Series Equivalent Large- -Signal Impedance Parameters
- Qualified Up to a Maximum of 50 V DD Operation
- Integrated ESD Protection
- Greater Negative Gate- -Source Voltage Range for Improved Class C Operation
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product. Figure 1. Pin Connections the source terminal for the transistor. © Freescale Semiconductor, Inc., 2008- -2010.All rights reserved.
Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Select Documentation/Application Notes - - AN1955. ensure proper mounting of these devices.
Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values
Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout
Figure 14. Series Equivalent Source and Load Impedance
MRF6V4300NR1 MRF6V4300NBR1 PACKAGE DIMENSIONS
MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- -Molded Plastic Packages
- AN3789: Clamping of High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
- Electromigration MTTF Calculator
- RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the parts Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description
0 July 2008 • Initial Release of Data Sheet
1 Oct. 2008 • Added Fig. 13, MTTF versus Junction Temperature, p. 6 Equivalent Source and Load Impedance data table and replotted data, p. 7 3 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related Continuous use at maximum temperature will affect MTTF footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1
- Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 14
MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008- -2010. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
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