MRF6V3090NR1 FREESCALE | Alldatasheet
Document overview
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Technical content
Features
- Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
- Characterized with Series Equivalent Large- -Signal Impedance Parameters
- Internally Input Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Excellent Thermal Stability
- Greater Negative Gate- -Source Voltage Range for Improved Class C Operation
- 225°C Capable Plastic Package
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Select Documentation/Application Notes - - AN1955. Figure 1. Pin Connections the source terminal for the transistor. © Freescale Semiconductor, Inc., 2010- -2011.All rights reserved.
Freescale Semiconductor, Inc. Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted) f = 860 MHz, DVB- -T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @±4 MHz Offset @ 4 kHz Bandwidth.
- Part internally input matched.
Freescale Semiconductor, Inc. Figure 2. MRF6V3090NR1(NBR1) 860 MHz Narrowband Test Circuit Schematic Table 6. MRF6V3090NR1(NBR1) 860 MHz Narrowband Test Circuit Component Designations and Values
Freescale Semiconductor, Inc. Figure 3. MRF6V3090NR1(NBR1) 860 MHz Narrowband Test Circuit Component Layout
Freescale Semiconductor, Inc. Figure 13. Single- -Carrier DVB- -T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
7.61 MHz
Figure 14. DVB- -T (8k OFDM) Spectrum Figure 15. Single- -Carrier DVB- -T (8k OFDM) Power Gain Pout, OUTPUT POWER (WATTS) AVG. Figure 16. Single- -Carrier DVB- -T (8k OFDM) ACPR Pout, OUTPUT POWER (WATTS) AVG. Figure 17. Single- -Carrier DVB- -T (8k OFDM) Drain Pout, OUTPUT POWER (WATTS) AVG.
64 QAM Data Carrier Modulation, 5 Symbols
Freescale Semiconductor, Inc. Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Figure 20. MRF6V3090NR1(NBR1) 470- -860 MHz Broadband 2″× 3″ Compact Reference Circuit Component Layout
Freescale Semiconductor, Inc. Table 7. MRF6V3090NR1(NBR1) 470- -860 MHz Broadband 2″× 3″ Reference Circuit Component Designations and
Freescale Semiconductor, Inc. Figure 21. Single- -Carrier DVB- -T (8k OFDM) Power Gain and Drain Figure 22. Single- -Carrier DVB- -T (8k OFDM) Output PAR and IMD delta marker at 4.2 MHz offset from center frequency. Figure 23. Pulsed Power Gain and Drain Efficiency
620 MHz
860 MHz
740 MHz
470 MHz
Freescale Semiconductor, Inc. MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5 PACKAGE DIMENSIONS
MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5
MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5
MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over- -Molded Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- -Molded Plastic Packages
- AN3789: Clamping of High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the parts Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2010 • Initial Release of Data Sheet 1 Dec. 2011 • Changed DVB- -T OFDM to DVB- -T (8k OFDM) throughout
- Fig. 6, CW Output Power versus Input Power: corrected typographical error in dBm to watts conversion v a l u e s ,p .5
- Fig. 7, CW Power Gain versus Output Power (NarrowbandTest Circuit): adjusted x- -axis scale from 0 to 140 watts to 10 to 150 watts, p. 5
- Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to correct X- -axis PEP power v a l u e s ,p .6
- Fig. 10, Intermodulation Distortion Products versus Two- -Tone Spacing: added f = 860 MHz to graph callouts, p. 6
- Updated Fig. 11, Two- -Tone Power Gain versus Output Power, to correct X- -axis PEP power values, p. 6
- Updated Fig. 12, Third Order Intermodulation Distortion versus Output Power, to correct X- -axis PEP power values, p. 6
- Fig. 18, MTTF versus Junction Temperature - - CW: MTTF end temperature on graph changed to match maximum operating junction temperature, p. 8
- Fig. 19, Series Equivalent Source and Load Impedance: removed plot, p. 9
- Added 470- -860 MHz Broadband Reference Circuit frequency table, p. 9
- Added Fig. 20, 470- -860 MHz Broadband 2″× 3″ Compact Reference Circuit Component Layout, p. 9
- Added Table 7, 470- -860 MHz Broadband 2″× 3″ Reference Circuit Component Designations and Values, p. 10
- Added Fig. 21, Single- -Carrier DVB- -T (8k OFDM) Power Gain and Drain Efficiency versus Frequency (Broadband Reference Circuit), p. 11
- Added Fig. 22, Single- -Carrier DVB- -T (8k OFDM) Output PAR and IMD Shoulder versus Frequency (Broadband Reference Circuit), p. 11
- Added Fig. 23, Pulsed Power Gain and Drain Efficiency versus Output Power (Broadband Reference C i r c u i t ) ,p .1 1
MRF6V3090NR1 MRF6V3090NR5MRF6V3090NBR1 MRF6V3090NBR5 RF Device Data Freescale Semiconductor, Inc. Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010- -2011. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
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