A2T18S166W12SR3 NXP | Alldatasheet
Document overview
- Manufacturer or author: NXP Semiconductors
- PDF pages: 18
Technical content
Features
Designed for wide instantaneous bandwidth applications Greater negative gate- -source voltage range for improved Class C operation Able to withstand extremely high output VSWR and broadband operating conditions Optimized for Doherty applications Document Number: A2T18S166W12S Rev. 0, 04/2018 NXP Semiconductors Technical Data 1805–1995 MHz, 38 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR A2T18S166W12SR3 NI- -780S- -2L2L Figure 1. Pin Connections
13 RFout/VDS
- Device can operate with VDD current
supplied through pin 2 and pin 4.
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available athttp://www.nxp.com/RF/calculators
Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Bandwidth @5M H zO f f s e t . Table 5. Ordering Information
- Part internally matched both on input and output.
Figure 2. A2T18S166W12SR3 Test Circuit Component Layout Table 6. A2T18S166W12SR3 Test Circuit Component Designations and Values
Figure 3. Single- -Carrier Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 38 Watts Avg. Figure 4. Intermodulation Distortion Products Figure 5. Output Peak- -to- -Average Ratio
1 VDD =2 8V d c ,IDQ = 800 mA, f = 1840 MHz
Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single- -Carrier W- -CDMA Power Gain, Drain Figure 7. Broadband Frequency Response
1840 MHz
1880 MHz 1805 MHz
1880 MHz
1805 MHz
Table 7. Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Table 8. Load Pull Performance — Maximum Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane.
Figure 16. A2T18S166W12SR3 Test Circuit Component Layout — 1930–1995 MHz Table 9. A2T18S166W12SR3 Test Circuit Component Designations and Values — 1930–1995 MHz
Figure 17. Single- -Carrier Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 38 Watts Avg. Pout, OUTPUT POWER (WATTS) AVG. Figure 18. Single- -Carrier W- -CDMA Power Gain, Drain
1995 MHz
Figure 19. Broadband Frequency Response
12 GAIN (dB)
3.84 MHz Channel Bandwidth
1960 MHz
1930 MHz
Table 10. Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane. Table 11. Load Pull Performance — Maximum Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output ofthe device at the package reference plane.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go tohttp://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2018 Initial release of data sheet
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