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Document overview
- Manufacturer or author: NXP Semiconductors
- PDF pages: 17
Technical content
Features
- Advanced high performance in−package Doherty
- Greater negative gate−source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems Document Number: A2T14H450−23N Rev. 1, 11/2022 NXP Semiconductors Technical Data 1427–1517 MHz, 93 W AVG., 31 V AIRFAST RF POWER LDMOS TRANSISTOR A2T14H450−23N
Figure 1. Pin Connections the source terminal for the transistor.
- Device cannot operate with V DD current
supplied through pin 3 and pin 6.
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- Refer to AN1955 , Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
- Each side of device measured separately.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Pout = 93 W Avg., f = 1452 MHz, Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Pout = 93 W Avg., f = 1511 MHz, Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Table 6. Ordering Information
- Part internally matched both on input and output.
- Measurements made with device in an asymmetrical Doherty configuration.
- P3dB = P avg + 7.0 dB where Pavg is the average output power measured using an unclipped W−CDMA single−carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
Figure 2. A2T14H450−23NR6 Test Circuit Component Layout Table 7. A2T14H450−23NR6 Test Circuit Component Designations and Values
Figure 3. Single−Carrier Output Peak−to−Average Ratio Compression (PARC) Broadband Performance @ Pout = 93 Watts Avg. Figure 4. Intermodulation Distortion Products Figure 5. Output Peak−to−Average Ratio
3.84 MHz Channel Bandwidth
Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single−Carrier W−CDMA Power Gain, Drain Figure 7. Broadband Frequency Response
12 GAIN (dB)
1511 MHz
1452 MHz
1482 MHz
1511 MHz 1482 MHz
1452 MHzACPR
Table 8. Carrier Side Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 9. Carrier Side Load Pull Performance — Maximum Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 11. Peaking Side Load Pull Performance — Maximum Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
A2T14H450−23N RF Device Data NXP Semiconductors PACKAGE DIMENSIONS
A2T14H450−23N
A2T14H450−23N RF Device Data NXP Semiconductors
A2T14H450−23N PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3789: Clamping of High Power RF Transistors and RFICs in Over−Molded Plastic Packages Software
- .s2p File Development Tools
- Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2017 • Initial release of data sheet 1 Nov. 2022 • Updated frequency band of operation for this device to 1427−1517 MHz, p. 1
A2T14H450−23N RF Device Data NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions o f sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP , the NXP logo, Freescale, the Freescale logo, and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. /C0069 2017, 2022 NXP B.V. Document Number: A2T14H450−23N Rev. 1, 11/2022