MW7IC18100N NXP | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Figure 1. Functional Block Diagram Figure 2. Pin Connections the source terminal for the transistors.

  1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

1990 MHz, 100 W, 28 V

© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Pout = 40 W Avg., 1805-1880 MHz or 1930-1990 MHz EDGE Modulation.

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product. Select Documentation/Application Notes - AN1955.

  1. Measurement made with device in straight lead configuration before any lead forming operation is applied.

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Figure 3. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Schematic — 1900 MHz Table 6. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1900 MHz

Figure 4. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Layout — 1900 MHz

Figure 15. Power Gain versus Output Power

28 V 32 V

Figure 16. EVM versus Frequency Figure 17. Spectral Regrowth at 400 kHz and Pout, OUTPUT POWER (WATTS) AVG. Figure 18. Spectral Regrowth at 400 kHz Pout, OUTPUT POWER (WATTS) AVG. Figure 19. Spectral Regrowth at 600 kHz Pout, OUTPUT POWER (WATTS) AVG. Figure 20. EVM and Power Added Efficiency

Figure 24. EDGE Spectrum

Figure 25. Series Equivalent Input and Load Impedance — 1900 MHz

Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 180 mA, IDQ2 = 1000 mA, TC = 25/C0053C, 50 Ohm System)

Figure 26. Pulsed CW Output Power

Figure 27. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Schematic — 1800 MHz Table 8. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1800 MHz

Figure 28. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Layout — 1800 MHz

Figure 45. Power Gain versus Frequency Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 40 W Avg.

Figure 46. Series Equivalent Input and Load Impedance — 1800 MHz

Figure 47. Pulsed CW Output Power

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 PACKAGE DIMENSIONS

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 RF Device Data Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 RF Device Data Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 RF Device Data Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 RF Device Data Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes

  • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
  • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
  • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
  • AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description

0 May 2007 • Initial Release of Data Sheet

1 June 2007 • Removed Case Operating Temperature from Maximum Ratings table, p. 2. Case Operating Temperature rating will be added to the Maximum Ratings table when parts’ Operating Junction Temperature is increased to 225°C. 2 Apr. 2008 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1, 2

  • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
  • Updated PCB information to show more specific material details, Figs. 3, 27, Test Circuit Schematic, p. 4,
  • Updated Part Numbers in Tables 6, 8, Component Designations and Values, to RoHS compliant part numbers, p. 4, 14
  • Replaced Case Outline 1617-01 with 1617-02, Issue A, p. 22-24. Revised cross-hatched area for exposed heat spreader. Added pin numbers 1, 12, 13, and 14 to Sheets 1 and 2. Corrected mm Min and Max values for dimension A1 to 0.99 and 1.09, respectively.
  • Replaced Case Outline 1618-01 with 1618-02, Issue A, p. 25-27. Added pin numbers 1, 12, 13, and 14 and Pin 1 Index designation to Sheet 1. Corrected dimensions e and e1 on Sheet 1. Removed Pin 5 designation from Sheet 2.
  • Replaced Case Outline 1621-01 with 1621-02, Issue A, p. 28-30. Added pin numbers 1, 12, 13, and 14 and Pin 1 Index designation to Sheet 1. Corrected dimensions e and e1 on Sheets 1 and 3. Removed Pin 5 designation from Sheet 2. 3 Mar. 2009 • Changed Storage Temperature Range in Max Ratings table from -65 to +200 to -65 to +150 for standardization across products, p. 2.
  • Updated Human Body Model ESD from Class 0 to 1 to reflect 2008 Human Body Model actual test data, p. 2
  • Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table, p. 2.

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2009. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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