MW6IC1940N-1 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large- -Signal Impedance Parameters and Common Source Scattering Parameters
  • On- -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
  • Integrated Quiescent CurrentTemperature Compensation with Enable/Disable Function(1)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Figure 1. Functional Block Diagram Figure 2. Pin Connections the source terminal for the transistors.

  1. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control

© Freescale Semiconductor, Inc., 2006- -2009.All rights reserved.

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product. Select Documentation/Application Notes - - AN1955.

Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued)

  1. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control

Figure 3. MW6IC1940GNBR1 Test Circuit Schematic Table 6. MW6IC1940GNBR1 Test Circuit Component Designations and Values

Figure 4. MW6IC1940GNBR1 Test Circuit Component Layout

Figure 5. 2- -Carrier W- -CDMA Wideband Performance @ Pout = 4.5 Watts Avg.

3.84 MHz Channel Bandwidth

Figure 6. 2- -Carrier W- -CDMA Wideband Performance @ Pout =2 6d B mA v g . Figure 7. Two- -Tone Power Gain versus Figure 8. Two- -Tone Power Gain versus

Figure 20. Series Equivalent Source and Load Impedance

Table 7. Common Source Scattering Parameters(VDD =2 8V ,IDQ1 = 200 mA, IDQ2 = 440 mA, TC =2 5°C, 50 ohm system)

Table 7. Common Source Scattering Parameters(VDD =2 8V ,IDQ1 = 200 mA, IDQ2 = 440 mA, TC =2 5°C, 50 ohm system)(continued)

Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
  • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2006 • Initial Release of Data Sheet 1 Jan. 2007 • Updated verbiage on Typical Performances table, p. 2

  • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3
  • Added new Figure 13, Pulsed CW Output Power versus Input Power, p. 6
  • Added new Figure 18, Power Gain versus Frequency, p. 7
  • Replaced Figure 19, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and locationof MTTF calculator for device, p. 7
  • Updated Product Documentation adding AN1907 and AN3263, p. 17 2 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2
  • Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1
  • Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1, Functional Block Diagram, p. 1
  • Changed Storage Temperature Range in Max Ratings table from - -65 to +200 to - -65 to +150 for standardization across products, p. 2
  • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
  • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 2
  • Updated verbiage on Typical Performances table, p. 3
  • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4
  • Adjusted scale for Fig. 11, Intermodulation Distortion Products versus Output Power, to show wider dynamic range, p. 7
  • Added new Figure 13, Pulsed CW Output Power versus Input Power, p. 7
  • Added new Figure 18, Power Gain versus Frequency, p. 8
  • Replaced Figure 19, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and locationof MTTF calculator for device, p. 8
  • Replaced Case Outline 1329- -09, Issue L, with 1329- -09, Issue M, p. 12- -14. Added pin numbers 1 through 17.
  • Replaced Case Outline 1329A- -03 with 1329A- -04, Issue F, p. 1, 15- -17. Added pin numbers 1 through 17. L1 mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number.
  • Data sheet archived. Part no longer manufactured.
  • Updated Product Documentation adding AN1907 and AN3263, p. 18 (continued)

REVISION HISTORY (continued) Revision Date Description 3 Mar. 2009 • Data sheet revised to reflect part status change, p.1, 4- -5, including use of applicable overlay.

  • Updated Product Documentation removing AN1907 and AN3263, p. 15 3.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reductionfrequency described in Product and Process Change Notification number, PCN13232, p. 1, 2 MW6IC1940NBR1.

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