MRF7S21170HR3_08 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006-2008. All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

  1. V GG = 2 x V GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
  2. Part internally matched both on input and output.

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values

Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout

Figure 12. Power Gain versus Output Power Figure 13. MTTF versus Junction Temperature is operated at VDD = 28 Vdc, Pout = 50 W Avg., and ηD = 31%. Figure 14. CCDF W-CDMA 3GPP , Test Model 1,

64 DPCH, 50% Clipping, Single-Carrier Test Signal

Channel Bandwidth @ ±5 MHz Offset.

3.84 MHz

Figure 15. Single-Carrier W-CDMA Spectrum

Figure 16. Series Equivalent Source and Load Impedance

MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS CASE 465B-03 ISSUE D NI-880 MRF7S21170HR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.535 0.545 13.6 13.8 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.871 0.889 19.30 22.60 Q .118 .138 3.00 3.51 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H F Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) S MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF CASE 465C-02 ISSUE D NI-880S MRF7S21170HSR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.905 0.915 22.99 23.24 B 0.535 0.545 13.60 13.80 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE D K C E H F MAMbbb B MT B B (FLANGE) MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.007 REF 0.178 REF

MRF7S21170HR3 MRF7S21170HSR3 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description

0 May 2006 • Initial Release of Data Sheet

1 June 2006 • Added Class C to description of parts, pg. 1

  • Changeded “≥” to “-” in the Device Output Signal Par bullet, pg. 1
  • Changed typ value from ±9 to 18 in Part-to-Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2
  • Expanded the characterization range in the MTTF Factor graph from 200 /C0095C to 230/C0095C, Fig. 12, p. 7 2 Aug. 2006 • Added Greater Negative Source bullet to Features section, p. 1
  • Corrected Fig. 14, Single-Carrier W-CDMA Spectrum, to 3.84 MHz, p. 7 3 Sept. 2006 • Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
  • Added “Insertion” to Part-to-Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2
  • Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical Performances, p. 2
  • Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
  • Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations and Values, p. 3
  • Added Figure 10, Digital Predistortion Correction, p. 6
  • Corrected Fig. 15, Single-Carrier W-CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
  • Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
  • Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9 4 May 2007 • Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1
  • Added “Optimized for Doherty Applications” bullet to Features section, p. 1
  • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
  • Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V GS(Q), and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2
  • Updated verbiage in Typical Performances table, p. 3
  • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
  • Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 7
  • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 8
  • Fig. 14, CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal, updated to include output power level at functional test, p. 8 5 Apr. 2008 • Corrected On Characteristics table ID value for VGS(th) from 270 μAdc to 372 μAdc and VDS(on) from 2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production test values, p. 2
  • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 4
  • Updated Fig. 14, CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal, to better represent production test signal, p. 8

MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006-2008. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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