MW6IC2015N NXP | Alldatasheet

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Technical content

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS MW6IC2015NBR1 MW6IC2015GNBR1 CASE 1329-09 TO-272 WB-16 PLASTIC MW6IC2015NBR1 CASE 1329A-04 TO-272 WB-16 GULL PLASTIC MW6IC2015GNBR1 (Top View) GND NC RFin VGS1 GND RFout / VDS2 GND V GS2 9 GND 11 Quiescent Current Temperature Compensation (1) VDS1 RFin VGS1 RFout/VDS2 VGS2 VDS1 NC NC NC NC NC NC Note: Exposed backside of the package is the source terminal for the transistors.

Figure 1. Functional Block Diagram Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2006-2008. All rights reserved.

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

15 W PEP , 1805-1880 MHz, Two-Tone CW, 100 kHz Tone Spacing

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product. Select Documentation/Application Notes - AN1955.

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

  1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

Figure 3. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1930-1990 MHz Table 6. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1930-1990 MHz

Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1930-1990 MHz

Figure 9. Intermodulation Distortion Products Figure 10. Pulsed CW Output Power versus Pout, OUTPUT POWER (WATTS) AVG. Figure 11. 2-Carrier W-CDMA ACPR, IM3, Power

10 MHz Carrier Spacing

3.84 MHz Channel Bandwidth

Figure 12. Power Gain and Power Added Figure 13. Power Gain versus Output Power

Figure 20. Series Equivalent Source and Load Impedance — 1930-1990 MHz

Figure 21. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1805-1880 MHz Table 7. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1805-1880 MHz

Figure 22. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1805-1880 MHz

Figure 27. Intermodulation Distortion Products Figure 28. Pulsed CW Output Power versus Pout, OUTPUT POWER (WATTS) AVG. Figure 29. 2-Carrier W-CDMA ACPR, IM3, Power Figure 30. Power Gain and Power Added Figure 31. Power Gain versus Output Power

28 V30 V

Figure 36. Series Equivalent Source and Load Impedance — 1805-1880 MHz

Figure 37. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — TD-SCDMA Table 8. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — TD-SCDMA

Figure 38. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — TD-SCDMA

Pout, OUTPUT POWER (dBm) AVG. Figure 39. 3-Carrier TD-SCDMA ACPR, ALT and Pout, OUTPUT POWER (dBm) AVG. Figure 40. 6-Carrier TD-SCDMA ACPR, ALT and Figure 41. 3-Carrier TD-SCDMA Spectrum

1.28 MHz

Figure 42. 6-Carrier TD-SCDMA Spectrum

1.28 MHz BW

Figure 43. Series Equivalent Input and Load Impedance — TD-SCDMA

MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS

MW6IC2015NBR1 MW6IC2015GNBR1

MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor

MW6IC2015NBR1 MW6IC2015GNBR1

MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor

MW6IC2015NBR1 MW6IC2015GNBR1

MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes

  • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
  • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
  • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 2 Feb. 2007 • Added “and TD-SCDMA” to data sheet description paragraph, p. 1.

  • Updated verbiage on Typical Performances table, p. 2
  • Corrected VBIAS and VSUPPLY callouts, Figs. 3 and 21, Test Circuit Schematic, p. 4, 11, Figs. 4 and 22, Test Circuit Component Layout, p. 5, 12
  • Updated Part Numbers in Tables 6 and 7, Component Designations and Values, to RoHS compliant part numbers, p. 4, 11
  • Adjusted scale for Figs. 7 and 25, Two-Tone Power Gain versus Output Power, Figs. 8 and 26, Intermodulation Distortion Products versus Output Power, Figs. 11 and 29, 2-Carrier W-CDMA ACPR, IM3, Power Gain and Power Added Efficiency versus Output Power, Figs. 12 and 30, Power Gain and Power Added Efficiency versus CW Output Power, Figs. 16 and 34, EVM and Power Added Efficiency versus Output Power, Figs. 17 and 35, Spectral Regrowth at 400 and 600 kHz versus Output Power, to better match the device’s capabilities, p. 6-8, 13-15
  • Replaced Figure 18, MTTF versus Junction Temperature with updated graph. Removed Amps 2 and listed operating characteristics and location of MTTF calculator for device, p. 9
  • Corrected Series Impedance data table test conditions, Figs. 20 and 36, p. 10, 16
  • Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 17-20.
  • Added Product Documentation and Revision History, p. 27 3 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2
  • Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1
  • Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1, Functional Block Diagram, p. 1
  • Changed Storage Temperature Range in Max Ratings table from -65 to +200 to -65 to +150 for standardization across products, p. 2
  • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150 °C, p. 2
  • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 2
  • Updated Part Numbers in Tables 6, 7, and 8 Component Designations and Values, to latest RoHS compliant part numbers, p. 4, 11, 17
  • Removed lower voltage tests from Figs. 13 and 31, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 7, 14
  • Adjust scale for Fig. 27, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 14
  • Replaced Case Outline 1329A-03 with 1329A-04, Issue F, p. 1, 24-26. Added pin numbers 1 through 17. mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number.
  • Replaced Case Outline 1329-09, Issue L, with 1329-09, Issue M, p. 21-23. Added pin numbers 1 through 17.

MW6IC2015NBR1 MW6IC2015GNBR1 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006-2008. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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+44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com Document Number: MW6IC2015N Rev. 3, 12/2008