MHV5IC1810N NXP | Alldatasheet
Document overview
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- PDF pages: 17
Technical content
Features
- Characterized with Series Equivalent Large- -Signal Impedance Parameters and Common Source Parameters
- On- -Chip Matching (50 Ohm Input, >5 Ohm Output)
- Integrated Quiescent CurrentTemperature Compensation with Enable/Disable Function
- On- -Chip Current Mirror gm Reference FET for Self Biasing Application(1)
- Integrated ESD Protection
- RoHS Compliant
- In Tape and Reel. R2 Suffix = 1500 Units, 16 mm Tape Width, 13 inch Reel. (Top View) NC VDS1 GND VGS1 VGS2 NC VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout NC VGS1 RFin VDS1 VGS2 RFinVDS2/RFout
2 Stage IC
Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections Select Documentation/Application Notes - - AN1987. © Freescale Semiconductor, Inc., 2006, 2011.All rights reserved.
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted) Select Documentation/Application Notes - - AN1955.
Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued)
Figure 3. MHV5IC1810NR2 Test Circuit Schematic 1930- -1990 MHz Table 6. MHV5IC1810NR2 Test Circuit Component Designations and Values 1930- -1990 MHz
Figure 4. MHV5IC1810NR2 Test Circuit Component Layout 1930- -1990 MHz
Figure 9. Pulse CW Output Power versus Input Figure 10. Power Gain and Power Added Figure 11. Power Gain versus Output Power
16 V IDQ1 = 120 mA
Figure 12. Power Gain versus Frequency
28 V 32 V
Figure 17. MHV5IC1810NR2 Test Circuit Schematic 1805- -1880 MHz Table 7. MHV5IC1810NR2 Test Circuit Component Designations and Values 1805- -1880 MHz
Figure 18. MHV5IC1810NR2 Test Circuit Component Layout 1805- -1880 MHz
Figure 21. Series Equivalent Input and Load Impedance
Refer to the following documents, Tools and software to aid your design process. Application Notes
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 1 Mar. 2011 • Figs. 3 and 17, Test Circuit Schematic, redrawn to reflect correct trace lengths and trace length measurements, p. 4, 9
- Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part numbers, p. 4, 9
- Added Product Documentation and Revision History, p. 16
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