AT9919K7-G

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Document overview

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• PDF pages: 16

Technical content

Features

• Hysteretic Control with High-side Current Sensing
• Wide Input Voltage Range: 4.5V to 40V
• >90% Efficiency
• Typical ±5% LED Current Accuracy
• Up to 2 MHz Switching Frequency
• Adjustable Constant LED Current
• Analog or Pulse-With Modulation (PWM) Control Sign al for PWM Dimming
• Overtemperature Protection
• –40ºC to +125ºC Operating Temperature Range

Applications

• LED Lighting Applications General Description The AT9919 is a PWM controller IC designed to drive high-brightness LEDs using a buck topology. It operates from an input volt age of 4.5 VDC to 40 VDC and employs hysteretic control with a high-side current sense resistor to set the constant output current. The operating frequency range can be set by selecting the prope r inductor. Operat ion at high switching frequency is possible since the hysteretic control maintains accuracy even at high frequencies. This permits the use of small inductors and capacitors, minimizing space and cost in the overall system. LED brightness control is achieved with PWM dimming from an analog or PWM input signal. Unique PWM circuitry allows true constant color with a high dimming range. The dimming frequency is programmed using a single external capacitor. The AT9919 comes in a small, 8-lead DFN package an d is qualified for LED lighting applications. Package Type 8-lead DFN (Top View) See Table 2-1 for pin information. CS VIN GATE RAMP ADIM GND VDD DIM GND Hysteretic Buck High-Brightness LED Driver with High-Side Current Sensing

DS20005595A-page 2  2016 Microchip Technology Inc. Functional Block Diagram CURRENT SENSE COMPARATOR UVLO COMPARATOR GATE DRIVER VIN VDD CS RAMP ADIM GND DIM GATE AT9919 PWM RAMP 0.1~1.9V - BANDGAP REF REGULATOR

 2016 Microchip Technology Inc. DS20005595A-page 3 AT9919 Typical Application CIN 0 - 2.0V AT9919 VIN VDD GATE GND CS RAMP ADIM DIM RSENSE L Circuit

DS20005595A-page 4  2016 Microchip Technology Inc.

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings† † Notic e: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Specifications: VIN = 12V, VDIM = VDD, VRAMP = GND, CVDD = 1 µF, RCS = 0.5Ω, TA = TJ = –40ºC to +125ºC (Note 1) unl ess otherwise noted. Parameter Sym. Min. Typ. Max. Unit Conditions Input DC Supply Voltage Range VIN 4.5 — 40 V DC input voltage Internally Regulated Voltage VDD 4.5 — 5.5 V VIN = 6V to 40V Supply Current IIN — — 1.5 mA GATE open Shutdown Supply Current IIN, SDN — — 900 µA DIM < 0.7V Current Limit IIN, LIM — 30 — mA VIN = 4.5V, VDD = 0V — 8 — VIN = 4.5V, VDD = 4V Oscillator Frequency fOSC — — 2 MHz VDD Undervoltage Lockout Threshold UVLO — — 4.5 V VDD rising VDD Undervoltage Lockout Hysteresis UVLOHYST — 500 — mV VDD falling SENSE COMPARATOR Sense Voltage Threshold High VCS(HI) 198 230 257 mV (VIN – VCS) rising Sense Voltage Threshold Low VCS(LO) 147 170 195 mV (VIN – VCS) falling Average Reference Voltage VCS(AVG) 186 200 214 mV VCS(AVG) = 0.5VCS(HI) + 0.5VCS(LO) Propagation Delay to Output High tDPDH — 70 — ns Falling edge of  VIN – VCS = VRS(LO) – 70 mV Propagation Delay to Output Low t DPDL — 70 — ns Rising edge of VIN – VCS = VRS(HI) + 70 mV Current Sense Input Current ICS — — 1 µA VIN – VCS = 200 mV Current Sense Threshold  Hysteresis VCS(HYST) — 56 80 mV DIM INPUT Pin DIM Input High Voltage VIH 2.2 — — V Pin DIM Input Low Voltage VIL — — 0.7 V Turn-on Time tON — 100 — ns DIM rising edge to VGATE = 0.5 x VDD, CGATE = 2 nF Turn-off Time tOFF — 100 — ns DIM falling edge to VGATE = 0.5 x VDD, CGATE = 2 nF Note 1: Limits obtained by design and characterization. 2: Fo r design guidance only

 2016 Microchip Technology Inc. DS20005595A-page 5 AT9919 GATE DRIVER GATE Current, Source IGATE 0.3 0.5 — A VGATE = GND (Note 2) GATE Current, Sink 0.7 1 — A VGATE = VDD (Note 2) GATE Output Rise Time TRISE — 40 55 ns CGATE = 2 nF GATE Output Fall Time TFALL — 17 25 ns CGATE = 2 nF GATE High Output Voltage VGATE(HI) VDD – 0.5 — — V IGATE = 10 mA GATE Low Output Voltage VGATE(LO) — — 0.5 V IGATE = –10 mA OVERTEMPERATURE PROTECTION Over Temperature Trip Limit TOT 128 140 — ºC Note 2 Temperature Hysteresis ∆THYST — 60 — ºC Note 2 ANALOG CONTROL OF PWM DIMMING Dimming Frequency fRAMP 130 — 300 Hz CRAMP = 47 nF 550 — 1250 CRAMP = 10 nF RAMP Threshold, Low VLOW — 0.1 — V RAMP Threshold, High VHIGH 1.8 — 2.1 V ADIM Offset Voltage VOS –35 — +35 mV TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE Operating Temperature TA –40 — +125 °C Junction Temperature TJ — — +150 °C Storage Temperature TS –65 — +150 °C PACKAGE THERMAL RESISTANCE 8-lead DFN JA — +37 — °C/W ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: VIN = 12V, VDIM = VDD, VRAMP = GND, CVDD = 1 µF, RCS = 0.5Ω, TA = TJ = –40ºC to +125ºC (Note 1) unless otherwise noted. Parameter Sym. Min. Typ. Max. Unit Conditions Note 1: Limits obtained by design and characterization. 2: For design guidance only

DS20005595A-page 6  2016 Microchip Technology Inc.

2.0 PIN DESCRIPTION

The details on the pins of AT9919 are listed on Table 2-1. Refer to Package Type for the location of pin TABLE 2-1: PIN FUNCTION TABLE Pin Number Pin Name Description 1 CS Current sense input. Senses LED string current. 2 VIN Input voltage 4.5V to 40V DC

3 RAMP Analog PWM dimming ramp output

4 ADIM Analog 0V~2V signal input for analog control of PWM dimming

5 DIM PWM signal input

6 VDD Internally regulated supply voltage. Connect a capacitor from VDD to ground.

7 GND Device ground

8 GATE Drives GATE of the external MOSFET

TAB GND Must be wired to pin 7 on PCB

 2016 Microchip Technology Inc. DS20005595A-page 7 AT9919

3.0 APPLICATION INFORMATION

3.1 General Description

The AT9919 is a step-down const ant-current high-brightness LED (HB LED) driver. The device operates from a 4.5V to 40V input voltage range and provides the gate drive output to an external N-channel MOSFET. A high-side current sense resistor sets the output current, and a dedicated PWM dimming input (DIM) allows for a wide range of dimming duty ratios. The PWM dimming could also be achieved by applying a DC voltage between 0V and 2V to the analog dimming input (ADIM). In this case, the dimming frequency can be programmed using a single capacitor at the RAMP pin. The high-side current sensing scheme minimizes the number of external components while delivering LED current with a ±8% accuracy, using a 1% sense resistor.

3.2 Undervoltage Lockout (UVLO)

The AT9919 includes a 3.7V UVLO with 500 mV hysteresis. W hen VIN falls below 3.7V, GATE goes low, turning off the external N-channel MOSFET. GATE goes high once V IN is 4.5V or higher. 3.3 5V Regulator VDD is the output of a 5V regulator capable of sourcing 8 mA. Bypass VDD to GND with a 1 µF capacitor.

3.4 DIM Input

The AT9919 allows dimming with a PWM signal at the DIM in put. A logic level below 0.7V at DIM forces the GATEOUTPUT low, turning off the LED current. To turn on the LED current, the logic level at DIM must be at least 2.2V.

3.5 ADIM and RAMP Inputs

The PWM dimming scheme can also be implemented by applying an analog control signal to the ADIM pin. If an analog control signal of 0V~2.0V is applied to ADIM, the device compares this analog input to a voltage ramp to pulse width modulate the LED current. Connecting an external capacitor to RAMP programs the PWM dimming ramp frequency. See Equation 3-1. EQUATION 3-1: fPWM The DIM and ADIM inputs can be used simultaneously. In such case, a f PWM(MAX) lower than the frequency of the dimming signal at DIM must be selected. The smaller dimming duty cycl e of ADIM and DIM will determine the GATE signal. When the analog control of PWM dimming feature is not used, RAMP must be wired to GND and ADIM should be connected to V DD. One possible application o f the ADIM feature may include protection of the LED load from overtemperature by connecting an NTC thermistor to ADIM as shown in Figure 3-1. NTC VDD ADIM GND AT9919 FIGURE 3-1: Overtemperature Protection using ADIM Pin.

3.6 Setting LED Current with the

External Resistor (RSENSE) The output current in the LED is determined by the external current sense resistor (R SENSE) connected between V IN and CS. Disregarding the effect of the propagation delays, the sense resistor can be calculated as seen in Equation 3-2. EQUATION 3-2: RSENSE 2--- ILED  200mV I LED

3.7 Selecting Buck Inductor (L)

The AT9919 regulates the LED output current using an in put comparator with hysteresis. (See Figure 3-2.) As the current through the inductor ramps up, and the voltage across the sense resistor reaches the upper threshold, the voltage at GATE goes low, turning off the external MOSFET. The MOSFET turns on again when the inductor current ramps down through the freewheeling diode until the voltage across the sense resistor equals the lower threshold.

DS20005595A-page 8  2016 Microchip Technology Inc. FIGURE 3-2: Inductor Current Waveform. t t ILED VDIM VRS(HI) RSENSE VRS(LO) RSENSE tDPDL tDPDH TS = 1 fS ΔI ΔIO Equation 3-3 shows how to determine the inductor valu e for a desired operating frequency (fS). EQUATION 3-3: L VIN VOUT– VOUT VOUT tDPDH Where: IO RSENSE and tDPDL and tDPDH are the propagation delays.  Note that the current ripple (∆I) in the inductor (L) is greater than ∆IO. The current ripple in the inductor (L) can be calculated with Equation 3-4. EQUATION 3-4: I IO VIN VOUT– tDPDL For proper inductor selection, note that the maximum switching frequency occurs at the highest V IN and VOUT = VIN/2.

3.8 MOSFET Selection

MOSFET selection is based on the maximum input operating voltage V IN, output current I LED and operating switching frequency. Choose a MOSFET that has a higher breakdown voltage than the maximum operation voltage, low RDS(ON) and low total charge for better efficiency. MOSFET threshold voltage must be adequate when operated at the low end of the input voltage operating range.

3.9 Freewheeling Diode Selection

The forward voltage of the freewheeling diode should be as low as possible for better efficiency. A Schottky diode is a good choice as long as the breakdown voltage is high enough to withstand the maximum operating voltage. The forw ard current rating of the diode must be at least equal to the maximum LED current.

3.10 LED Current Ripple

The LED current ripple is equal to the inductor current ripple. In cases when a lower LED current ripple is needed, a capacitor can be placed across the LED terminals.

 2016 Microchip Technology Inc. DS20005595A-page 9 AT9919

3.11 PCB Layout Guidelines

Careful PCB layout is critical to achieving low switching losses and stable operation. Use a multilayer board whenever possible for better noise immunity. Minimize ground noise by connecting high-current ground returns, the input bypass capacitor ground lead and the output filter ground lead to a single point (star ground configuration). The fast di/dt loop is composed of the input capacitor C IN, the freewheeling diode and the MOSFET. To minimize noise interaction, this loop area should be as small as possible. Place RSENSE as close as possible to the input filter and V IN. For better noise immunity, a Kelvin connection is strongly recommended between CS and R SENSE. Connect the exposed tab of the IC to a large area ground plane for improved power dissipation.

DS20005595A-page 10  2016 Microchip Technology Inc.

4.0 PACKAGING INFORMATION

4.1 Package Marking Information

Legend: XX...X Product Code or Customer-specific information  Y Year code (last digit of calendar year)  YY Year code (last 2 digits of calendar year)  WW Week code (week of January 1 is week ‘01’)  NNN Alphanumeric traceability code  Pb-free JEDEC ® designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part numbe r cannot be marked on one line, it will be carried over to the next line, t hus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo. 8-lead DFN Example NNN YYWW XXXX 373 1612 9919

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.  2016 Microchip Technology Inc. DS20005595A-page 11 AT9919

DS20005595A-page 12  2016 Microchip Technology Inc. NOTES:

 2016 Microchip Technology Inc. DS20005595A-page 13 AT9919 APPENDIX A: REVISION HISTORY Revision A (October 2016)

• Converted Supertex Doc# DSFP- AT9919 to Microchip DS20005595A.
• Changed packaging quantity of 8-lead DFN from 3000/Reel to 3300/Reel.
• Made minor text changes throughout the docu - ment.

DS20005595A-page 14  2016 Microchip Technology Inc. PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. Example: a) AT9919K7-G: Hysteretic Buck High-Brightness LED Driver with High-Side Current Sensing, 8-lead (3x3) DFN Pack- age, 3300/Reel PART NO. Device Device: AT9919 = Hysteretic Buck High-Brightness LED Driver with High-Side Current Sensing Package: K7 = 8-lead (3x3) DFN Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 3300/Reel for a K7 Package XX Package - X - X Environmental Media Type Options

 2016 Microchip Technology Inc. DS20005595A-page 15 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application me ets with your specifications. MICROCHIP MAKES NO RE PRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY , PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting fr om such use. No licenses are conveyed, implicitly or ot herwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, ETHERSYNCH, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker, Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2016, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-5224-0992-2 Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification cont ained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used in the intended manner and under normal conditions.
• There are dishonest and possibly illegal meth ods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC ® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==

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