BAT45 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. November 1994 DO 35 (Glass) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 15 V IF Forward Continuous Current T a =2 5°C3 0 m A IFSM Surge non Repetitive Forward Current t p ≤ 1s 60 mA Tstg Tj Storage and Junction Temperature Range - 65 to +150 - 65 to +125 TL Maximum Temperature for Soldering during 10s at 4mm from Case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 400 °C/W THERMAL RESISTANCE * On infinite heatsink with 4mm lead length
(1) Pulse test: tp ≤ 300µs δ< 2% . (2) Noise figure test : - diode is inserted in a tuned stripline circuit - local oscillator frequency 1GHz - local oscillator power 1mW - intermediate frequency amplifier, tuned on 300MHz, has a noise figure 1.5dB Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. Symbol Test Conditions Min. Typ. Max. Unit VBR Tamb =2 5°CI R =1 0µA 15 V VF (1) Tamb =2 5°CI F = 1mA 0.38 V Tamb =2 5°CI F = 10mA 0.5 Tamb =2 5°CI F = 30mA 1 IR (1) Tamb =2 5°CV R =6 V 0.1 µA STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit CT amb =2 5°CV R = 1V f = 1MHz 1.1 pF τ Tamb =2 5°CI F = 20mA Krakauer Method 100 ps F (2) T amb =2 5°C f = 1GHz 6 7 dB DYNAMIC CHARACTERISTICS BAT 45
Marking: clear, ring at cathode end. Weight: 0.15g Cooling method: by convection and conduct ion PACKAGE MECHANICAL DATA DO 35 Glass note 2 BA B C note 1note 1 D D O/ O/ E E REF. DIMENSIONS NOTESMillimeters Inches Min. Max. Min. Max. A 3.050 4.500 0.120 0.117 1 - The lead diameter∅ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59”(15 mm) B 12.7 0.500 ∅ C 1.530 2.000 0.060 0.079 ∅ D 0.458 0.558 0.018 0.022 E 1.27 0.050 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical component s in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. BAT 45