AT-42085 HP | Alldatasheet

Document overview

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Technical content

Features

  • High Output Power: 20.5 dBm Typical P1 dB at 2.0␣ GHz
  • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz
  • Low Noise Figure: 2.0 dB Typical NFO at 2.0␣ GHz
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT
  • Low Cost Plastic Package AT-42085

85 Plastic Package

Description

Hewlett-Packard’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigi- tated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applica- tions. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50␣Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42085 bipolar transistor is fabricated using Hewlett-Packard’s

10 GHz f

(SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 5965-8913E

Symbol Parameter Units Maximum[1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 80 PT Power Dissipation[2,3] mW 500 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance[2,4]: θjc = 130°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 7.7 mW/°C for TC > 85°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz dB 15.5 17.0 f = 2.0 GHz 11.0 f = 4.0 GHz 5.0 P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 20.5 VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.0 G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 14.0 f = 4.0 GHz 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 2.0 f = 4.0 GHz 3.5 GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.5 f = 4.0 GHz 9.5 fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0 hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270 ICBO Collector Cutoff Current; VCB = 8 V µA 0.2 IEBO Emitter Cutoff Current; VEB = 1 V µA 2.0 CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.32 Note: 1. For this test, the emitter is grounded. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max.

Figure 4. Insertion Power Gain, Maximum Stable Gain vs. Frequency. Figure 2. Output Power and 1 dB

2.0 GHz

4.0 GHz

Figure 1. Insertion Power Gain vs. Collector Current and Frequency.

1.0 GHz

Figure 3. Output Power and 1 dB Current and Voltage. f = 2.0 GHz. Figure 5. Noise Figure and Associated

AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VCE =8 V , IC␣=␣ 10 mA Freq. S 11 S21 S12 S22 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VCE =8 V , IC␣=␣ 35 mA Freq. S 11 S21 S12 S22 A model for this device is available in the DEVICE MODELS section. AT-42085 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. NF O Γopt GHz dB Mag Ang RN/50 0.1 1.1 .05 16 0.13 0.5 1.2 .06 77 0.13 1.0 1.3 .10 131 0.12 2.0 2.0 .24 -179 0.11 4.0 3.5 .46 -128 0.25

85 Plastic Package Dimensions

5° TYP. 45° EMITTER EMITTER COLLECTORBASE .085 2.15 .286 – .030 7.36 – .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .020 .51 .07 0.43 .060 – .010 .15 – .05 0.143 – 0.015 3.63 – 0.38 420