AT41485

AT41485 HP | Alldatasheet

Document overview

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Technical content

Features

• Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz
• High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical f T AT-41485

85 Plastic Package

Description

Agilent’s AT-41485 is a general purpose NPN bipolar transistor that offers excellent high fre- quency performance. The AT- 41485 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigi- tated geometry yields an interme- diate sized transistor with imped- ances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier. The AT-41485 bipolar transistor is fabricated using Agilent’s 10 GHz f T Self-Aligned-Transistor (SAT) process. The die is nitride passi- vated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

Symbol Parameter Units Maximum[ 1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 60 PT Power Dissipation [2,3] mW 500 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance [2,4]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 6.5 mW/ °C for TC > 73°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 1.0 GHz dB 17.5 f = 2.0 GHz 11.5 P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 18.5 VCE = 8 V, IC = 25 mA G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.4 1.8 f = 2.0 GHz 1.7 f = 4.0 GHz 3.0 G A Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 17.5 18.5 f = 2.0 GHz 13.5 f = 4.0 GHz 9.5 fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0 hFE Forward Current Transfer Ratio; V CE = 8 V, IC = 10 mA — 30 150 270 ICBO Collector Cutoff Current; V CB = 8 V µA 0.2 IEBO Emitter Cutoff Current; VEB = 1 V µA 1.0 CCB Collector Base Capacitance [1]: VCB = 8 V, f = 1 MHz pF 0.25 Notes: 1. For this test, the emitter is grounded.

Figure 1. Noise Figure and Associated Figure 3. Optimum Noise Figure and Figure 4. Optimum Noise Figure and Figure 5. Insertion Power Gain, Maximum Stable Gain vs. Frequency. Figure 2. Output Power and 1 dB

2.0 GHz

4.0 GHz

4.0 GHz 6

Figure 6. Insertion Power Gain vs. Collector Current and Frequency.

1.0 GHz

AT-41485 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VCE =8 V , IC = 10 mA Freq. S 11 S21 S12 S22 AT-41485 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω , TA =2 5°C, VCE =8 V , IC = 25 mA Freq. S 11 S21 S12 S22 A model for this device is available in the DEVICE MODELS section. AT-41485 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. NF O Γopt GHz dB Mag Ang RN/50 0.1 1.3 .12 5 0.17 0.5 1.3 .10 25 0.17 1.0 1.4 .06 50 0.16 2.0 1.7 .25 172 0.16 4.0 3.0 .48 -131 0.24

85 Plastic Package Dimensions

5° TYP. 45° EMITTER EMITTER COLLECTORBASE .085 2.15 .286 – .030 7.36 – .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .020 .51 .07 0.43 .060 – .010 .15 – .05 0.143 – 0.015 3.63 – 0.38 414

www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies 5965-8926E (11/99)