AT10-0009 MA-COM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Input IP3: +35 dBm Min. (Full Attenuation Range)
- Input IP3 is 15 -20 dB Better Than GaAs
- Linear Operation: +20 dBm Typ.
- 38 dB Dynamic Range (With 30 mA Bias Current)
- Single Control Voltage
- 50 ohm Impedance
- Linear Driver, DR65-0002, Available
- Test Boards are Available
- Tape and Reel Packaging Available
- SOW-16 Package
Description
M/A-COM's AT10-0009 is a PIN diode based voltage variable attenuator. This device is in a SOW-16, wide body plastic surfac e mount package. These attenuators have linear operating power and input intercept point levels 15 - 20 dB better than GaAs FET MMIC voltage variable attenuators. They are ideally suited for use where low distortion, high linear operating power and high dynamic range are required. These devices are optimized for the GSM frequency band, but exhibit excellent performance and repeatability over the ent ire specified frequency band. The AT10-0009 is ideally suited for wireless communications systems.
Ordering Information
AT10-0009TR 1000 piece reel AT10-0009-TB Sample Test Board DR65-0002-TBG Unit with Driver on Test Board Note: Reference Application Note M513 for reel size information. Functional Schematic Pin Configuration Pin No. Function Pin No. Function
1 GND 9 GND
2 RF 10 RF
3 GND 11 GND
4 GND 12 GND
5 GND 13 GND
6 GND 14 GND
7 Bias1 15 Bias1
8 GND 16 GND
- Bias currents may be applied to pin 7 or 15. The unused pin should be isolated.
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Voltage Variable Absorptive Attenuator, 800 - 1000 MHz Rev. V9 AT10-0009 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications: TA = 25°C, Z0 = 50Ω Parameter Test Conditions Frequency Units Min Typ Max Insertion Loss 0 volts 800-1000 MHz 925 - 960 MHz dB dB 3.5 3.3 4.2 3.9 Attenuation (Above Loss) 12 mA bias current 800-1000 MHz 925 - 960 MHz dB dB Attenuation Flatness 0 to 30 dB attenuation 800-1000 MHz 925 - 960 MHz dB dB 1.5 0.4 2.5 0.8 VSWR 0 to 30 dB attenuation 800-1000 MHz 925 - 960 MHz Ratio Ratio 1.6:1 1.4:1 2.0:1 1.7:1 Switching Speed 50% Control to 90%/10% RF 800-1000 MHz µs — — 10.0 Linear Operation — 800-1000 MHz dBm — +20 — Input IP3 Two-tone inputs up to +10 dBm 800-1000 MHz dBm +35 +40 —- I Control — 800-1000 MHz mA — — 30 Recommended PCB Configuration Absolute Maximum Ratings 2,3 Parameter Absolute Maximum Max. Input Power +27 dBm Operating Temperature -40°C to +85°C Storage Temperature -65°C to +125°C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electric ity. Proper ESD control techniques should be used when handling these devices.
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Voltage Variable Absorptive Attenuator, 800 - 1000 MHz Rev. V9 AT10-0009 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Attenuation Flatness (dB) @ +25°C Typical VSWR @ +25°C Attenuation vs. Bias Current Frequency = 1000 MHz Typical Performance Curves Insertion Loss 750 825 900 975 1 050 Fre qu e n cy (MHz ) Loss (dB) 750 825 900 975 1 050 F requency (MHz) Flatness (dB) 30 dB 20 dB 1 0 dB Ref 1. 0 1. 5 2.0 2.5 750 825 900 975 1 050 Fre qu e n cy (MHz ) VSWR (Ratio) Ref30 dB15 d B 0123456789 1 0 Bias Current (mA) Attenuation (dB) +85° C+25° C-40° C
Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Voltage Variable Absorptive Attenuator, 800 - 1000 MHz Rev. V9 AT10-0009 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. SOW-16† † Reference Application Note M538 for lead-free solder reflow recommendations.