AT006N3-00 ALPHA | Alldatasheet

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Technical content

Features

■ 30 dB Range ■ Low DC Drain ■ Fast Switching ■ Capable of Meeting MIL-STD Requirements5 Chip Outline AT006N3-00

Description

The AT006N3-00 chip is a GaAs FET MMIC non-reflective bridged “T” attenuator that provides over 30 dB of “matched” attenuation.The input and output VSWR is less than 1.5:1 maximum under all attenuation values. Applications for these fast attenuators are AGC circuits and variable level control in high reliability and telecommunications systems. 0.000 0.000 0.940 0.601 1.115 0.840 0.100 0.100 0.556 1.014 0.319 0.793 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/°C. 3. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. 4. DC = 300 kHz. 5. See Quality/Reliability section. Parameter Condition Frequency Min. Typ. Max. Unit Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 7 ns On, Off (50% CTL to 90/10% RF) 10 ns Video Feedthru3 20 mV Attenuation Flatness 0–10 dB DC–6 GHz ±0.5 dB 11–20 dB ±1.0 dB 21–30 dB ±1.5 dB 31–Max. ±2.0 dB Compression Point for all Attenuation 0.1 dB -8 (-4) dBm Levels 50 MHz (> 500 MHz) 1.0 dB -3 (0) dBm Control Voltages V Low = 0 to -0.2 V @ 20 µA Max. VHigh = -5 V @ 50 µA Max. Operating Characteristics at 25°C Parameter1 Frequency4 Min. Typ. Max. Unit Insertion Loss2 DC–1.0 GHz 0.8 1.0 dB DC–2.0 GHz 1.0 1.2 dB DC–4.0 GHz 1.2 1.4 dB DC–6.0 GHz 1.5 1.7 dB Attenuation Range DC–1.0 GHz 30 38 dB DC–2.0 GHz 29 35 dB DC–4.0 GHz 26 32 dB DC–6.0 GHz 25 30 dB VSWR (I/O) DC–2.0 GHz 1.2:1 1.3:1 Electrical Specifications at 25°C Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–6 GHz AT006N3-00 2 Alpha Industries, Inc.[781] 935-5150 • Fax [617]824-4579• Emailsales@alphaind.com • www .alphaind.com Specifications subject to change without notice.3/99A R elative A ttenuation vs. C ontrol Voltages R elative Attenuation (dB) -5.0 0 5 F = 1 G H z, VP1 = -3.5 V 10 15 20 25 30 35 -4.0 -3.0 -2.0 -1.0 V1 V2 C ontrol Voltages (V) V1 (Series) V2 (Shunt) A ttenuation vs. 1.0 dB C om pression Point Attenuation (dB) 0 5 F = 50 M H z 10 15 20 25 30 PIN at 1.0 dB C om pression (dBm ) 20 J1 J2 V2V1 V1 (ALT.) G N D G N D G N D A ttenuation (B y State) vs. Frequency Frequency (G H z) D C 31 2 4 5 6 Attenuation (dB) Typical Performance Data Chip Layout Switch Schematic Characteristic Value RF Input Pow er (RF In) 10 mW > 500 MHz 4 mW @ 50 MHz Control Voltage (VC ) +0.2 V, -10 V Operating Temperature (TOP ) -55°C to +125°C Storage Temperature (TST ) -65°C to +150°C Thermal Resistance(Θ JC) 25°C/W Absolute Maximum Ratings 50 Ω 50 Ω J1 J2 V1 V2