ASW65R120EFD SY | Alldatasheet
Document overview
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Technical content
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. 2. Features Low drain-source on-resistance: RDS(ON) = 0.105Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 3 to 5 V Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 120 mΩ Qg,typ 55.4 nC ID,pulse 90 A Body diode dv/dt 50 V/ns 3. Packaging and Internal Circuit Part Name Package Marking ASW65R120EFD TO247 ASW65R120EFD ASW65R120EFD TO220F ASW65R120EFD ASW65R120EFD TOLL-8L ASW65R120EFD TO220F TO247 TOLL
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD
1 Maximum ratings
at Tj = 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symb ol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 30 A TC=25° C Pulsed drain current2) ID,pulse - - 90 A TC=25° C Avalanche energy, single pulse EAS - - 1216 mJ Tc=25℃,VDD=50V, L=10mH, RG=25Ω Avalanche current, single pulse IAR - - 10.9 A Tc=25℃,VDD=50V,L=1 0mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 36.2 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (TO247) Ptot - - 277.8 W TC=25° C Power dissipation (TO220F) Ptot - - 36.5 W TC=25° C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Soldering Temperature Distance of 1.6mm from case for 10s TL 260 °C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=400V, ISD<= ID, Tj=25° C see table 8 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD
2 Thermal characteristics
Table 3 Thermal characteristics (TO220F) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.4 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint Thermal characteristics (TO247,TOLL) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.45 ° C/W - Thermal resistance, junction - ambient RthJA - - 57 ° C/W device on PCB, minimal footprint
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD
3 Electrical characteristics
at Tj=25° C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 655 - - V VGS=0V, ID=250uA Gate threshold voltage V(GS)th 3 5 V VDS=VGS, ID=250uA Zero gate voltage drain current IDSS - - 2 uA VDS=650V, VGS=0V, Tj=25° C Gate-source leakage current IGSS - - +/_100 nA VGS=+/-30V, VDS=0V Drain-source on-state resistance RDS(on) - 0.105 0.120 Ω VGS=10V, ID=14A, Tj=25° C Gate resistance (Intrinsic) RG - 12.6 - Ω f=1MHz, open drain Transconductance Gfs 29.2 S VDS=20V, ID=15A Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 2657 - pF VGS=0V, VDS=100V, f=1MHz Output capacitance Coss - 89 - pF VGS=0V, VDS=100V, f=1MHz Reverse transfer capacitance Crss - 2 - pF VGS=0V, VDS=100V, f=1MHz Turn-on delay time td(on) - 29.6 - ns VDD=400V,VGS=10V,ID=19A, RG=2Ω;see table 9 Rise time tr - 31.3 - ns VDD=400V,VGS=10V,ID=19A, RG=2Ω;see table 9 Turn-off delay time td(off) - 94.6 - ns VDD=400V,VGS=10V,ID=19A, RG=2Ω;see table 9 Fall time tf - 9.1 - ns VDD=400V,VGS=10V,ID=19A, RG=2Ω;see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 15 - nC VDD=400V, ID=19A, VGS=0 to 10V Gate to drain charge Qgd - 20.2 - nC VDD=400V, ID=19A, VGS=0 to 10V Gate charge total Qg - 55.4 - nC VDD=400V, ID=19A, VGS=0 to 10V Gate plateau voltage Vplateau - 5.9 - V VDD=400V, ID=19A, VGS=0 to 10V
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD Table 7 Reverse diode characteristic Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.67 - V VGS=0V, IF=1A, Tj=25° C Reverse recovery time trr - 136.7 - ns VR=400V, IF=17A,diF/dt=100A/µ s; see table 8 Reverse recovery charge Qrr - 0.741 - uC VR=400V, IF=17A,diF/dt=100A/µ s; see table 8 Peak reverse recovery current Irrm - 10.28 - A VR=400V, IF=17A,diF/dt=100A/µ s; see table 8
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD
4 Electrical characteristics diagram
Diagram 1: Typ. output characteristics Diagram 2: Typ. Coss stored energy ID=f(VDS);Tj=25 ° C; parameter: VGS Eoss=f(VDS) Diagram 3: Typ. transfer characteristics Diagram 4: Typ. gate charge ID=f(VGS);parameter: Tj VGS=f(Qgate);ID=19A pulsed; parameter: VDD
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD Diagram 5: Drain-source breakdown voltage Diagram 6: Typ. capacitances VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V; f=1MHz Diagram7:Typ. On-Resistance vs. Junction Temperature Diagram 8: Safe operating area TC=25 ° C， Rds(on)=f(Tj);Vgs=10V/ID=14A ID=f(VDS); TC=25 ° C; VGS> 7V; D=0; parameter tp
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD Diagram 9: Typ. Power Dissipation Diagram 10: Max. transient thermal impedance Ptot=f(TC) ZthJC=f(tP); parameter: D=tp/T Diagram 11: Forward characteristics of reverse diode Diagram 12: Typ. Drain-source on-state resistance IF=f(VDS);parameter: Tj Rds(on)=f(Tj);Tj=25C, Parameter :Vgs
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table 10 Unclamped inductive load
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD
6 Package Outlines
Figure1：Outline PG‐TO247(CD&HT)
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD Figure2：Outline PG‐TO220F(HT)
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD Figure3：Outline PG‐TOLL(JQ)
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD
Revision History
Revision Date Subjects (major changes since last revision) 1.0 2020-09-15 Release version 1.1 2022-06-18 Updated TO247 POD to CD 1.2 2022-12-23 Updated Ciss/Coss/Crss&Trr/Qrr/Irrm, and added electrical characteristics diagram 1.3 2023-04-26 Added TO220F package 1.4 2023-08-22 Added TOLL-8L package 1.5 2023-08-31 Added Gfs