ASW50R130EA SY | Alldatasheet
Document overview
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Technical content
MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance: RDS(ON) = 0.113Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V Table 1 Key Performance Parameters 3. Packaging and Internal Circuit Part Name Package Marking ASW50R130EA TO247-3L ASW50R130EA Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 130 mΩ Qg,typ 32.9 nC ID,pulse 90 A TO247
1 Maximum ratings
at Tj = 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 30 A TC=25° C Pulsed drain current2) ID,pulse - - 90 A TC=25° C Avalanche energy, single pulse EAS - - 414 mJ Tc=25℃,VDD=50V,ID=9.1A, L = 10mH, RG=25Ω Avalanche current, single pulse IAR - - 9.1 A Tc=25℃,VDD=50V,L= 10mH, RG=25Ω Gate source voltage (static) VGS -30 - 30 V static; Power dissipation TO247 Ptot - - 160 W TC=25° C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Soldering Temperature Distance of 1.6mm from case for 10s TL 260 °C MOSFET dv/dt ruggedness dv/dt - - 12.3 V/ns Vds=0-400v Reverse diode dv/dt dv/dt - - 50 V/ns Vds=0-400v，IF=7.7A 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
2 Thermal characteristics
Table 3 Thermal characteristics (TO247) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.8 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint
3 Electrical characteristics
at Tj=25° C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V, ID=250uA Gate threshold voltage V(GS)th 2.5 3.5 V VDS=VGS, ID=250uA Zero gate voltage drain current IDSS - - 1 uA VDS=500V, VGS=0V, Tj=25° C Gate-source leakage current IGSS - - 100 nA VGS=30V, VDS=0V Drain-source on-state resistance RDS(on) - 0.113 0.130 Ω VGS=10V, ID=10A, Tj=25° C Gate resistance (Intrinsic) RG - 2.5 - Ω f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 1446 - pF VGS=0V, VDS=100V, f=1MHz Output capacitance Coss - 79 - pF VGS=0V, VDS=100V, f=1MHz Reverse transfer capacitance Crss - 1.31 - pF VGS=0V, VDS=100V, f=1MHz Turn-on delay time td(on) - 20 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Rise time tr - 13 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Turn-off delay time td(off) - 144 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Fall time tf - 25 - ns VDD=400V,VGS=13V,ID=7.7A, RG=3.4Ω Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 6.5 - nC VDD=400V, ID=7.7A, VGS=0 to 10V Gate to drain charge Qgd - 11.4 - nC VDD=400V, ID=7.7A, VGS=0 to 10V Gate charge total Qg - 32.9 - nC VDD=400V, ID=7.7A, VGS=0 to 10V
Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.7 - V VGS=0V, IF=1A, Tj=25° C Reverse recovery time trr - 205 - ns VR=400V, IF=7.7A, diF/dt=100A/µ s Reverse recovery charge Qrr - 2.0 - uC VR=400V, IF=7.7A, diF/dt=100A/µ s Peak reverse recovery current Irrm - 20.3 - A VR=400V, IF=7.7A, diF/dt=100A/µ s
4 Electrical characteristics diagram
Diagram 1: Typ. Output characteristics Diagram 2: Typ. Drain Current De-rating ID=f(VDS);Tj=25 ° C; parameter: VGS Id=f(TC); Diagram 3: Typ. Rdson vs. Drain Current Diagram 4: Typ. Rdson – Junction Temperature Rds(on)=f(Id);Vgs=10V Rds(on)=f(Tj);Vgs=10V/ID=6A Diagram 5: Typ. transfer characteristics Diagram 6: Typ. Capacitance vs. Vds ID=f(VDS);Tj=25 ° C; parameter: VGS C=f(VDS);VGS=0V; f=1MHz
Diagram 7: Typ. BVDSS voltage vs. Temperature Diagram 8: Typ. Source-Drain Diode Forward VGS=f(Tj);ID=250uA ISD=f(VDS); TC=25 ° C; Diagram 9: Typ. Gate charge Diagram 10: Typ. Maximum Safe Operating Area VGS=f(Qgate);ID=7.7A pulsed; parameter: VDD ID=f(VDS); TC=25 ° C; VGS> 7V; D=0; parameter tp Diagram 11: Typ. Power Dissipation Diagram 12: Normalized Transient Impedance Ptot)=f(TC);
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table 10 Unclamped inductive load
6 Package Outlines
Figure 1：Outline PG‐TO247-3L(HT)
Revision History
Revision Date Subjects (major changes since last revision) 1.0 2024-3-21 Preliminary version