ASA65R1K3E SY | Alldatasheet
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Technical content
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E TO220F TO251 TO252 MOSFET Silicon N-Channel MOS 1. Applications Soft Switching Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC Application-Server Power, Telecom Power, EV Charging,Solar inverter. 2. Features Low drain-source on-resistance: RDS(ON) = 1.16Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.5 to 4.5 V Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 1.3 Ω Qg,typ 5.76 nC ID,pulse 12 A 3. Packaging and Internal Circuit Part Name Package Marking ASA65R1K3E TO220F ASA65R1K3E ASU65R1K3E TO251 ASU65R1K3E ASD65R1K3E TO252 ASD65R1K3E
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E
1 Maximum ratings
at Tj = 25°C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 4 A TC=25°C Pulsed drain current2) ID,pulse - - 12 A TC=25°C Avalanche energy, single pulse EAS - - 125 mJ Tc=25℃, VDD=50V, L=10mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 55 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 28 W TC=25°C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V, ISD<=IS, Tj = 25°C; see table 8 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E
2 Thermal characteristics
Table 3 Thermal characteristics（TO220 FullPAK） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 4.4 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W device on PCB, minimal footprint Thermal characteristics（TO251 and TO252） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.0 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E
3 Electrical characteristics
at Tj=25°C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 655 - - V VGS=0V, ID=10mA Gate threshold voltage V(GS)th 2.5 4.5 V VDS=VGS, ID=250uA Zero gate voltage drain current IDSS - - 1 uA VDS=650V, VGS=0V, Tj=25°C Gate-source leakage current IGSS - - 100 nA VGS=20V, VDS=0V Drain-source on-state resistance RDS(on) - 1.16 1.3 Ω VGS=10V, ID=2A, Tj=25°C Gate resistance RG - 12.9 - Ω f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 238 - pF VGS=0V, VDS=50V, f=10kHz Output capacitance Coss - 25 - pF VGS=0V, VDS=50V, f=10kHz Reverse transfer capacitance Crss 4.2 pF VGS=0V, VDS=50V, f=10kHz Turn-on delay time td(on) - 5.2 - ns VDD=400V,VGS=13V,ID=1.2A, RG=10Ω;see table 9 Rise time tr - 22 - ns VDD=400V,VGS=13V,ID=1.2A, RG=10Ω;see table 9 Turn-off delay time td(off) - 30.4 - ns VDD=400V,VGS=13V,ID=1.2A, RG=10Ω;see table 9 Fall time tf - 25.2 - ns VDD=400V,VGS=13V,ID=1.2A, RG=10Ω;see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 0.4 - nC VDD=400V, ID=1.2A, VGS=0 to 10V Gate to drain charge Qgd - 1.5 - nC VDD=400V, ID=1.2A, VGS=0 to 10V Gate charge total Qg - 5.76 - nC VDD=400V, ID=1.2A, VGS=0 to 10V Gate plateau voltage Vplateau - 4.2 - V VDD=400V, ID=1.2A, VGS=0 to 10V
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.8 - V VGS=0V, IF=1A, Tj=25°C Reverse recovery time trr - 158 - ns VR=400V, IF=49.6A, diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.412 - uC VR=400V, IF=49.6A, diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 5.92 - A VR=400V, IF=49.6A, diF/dt=100A/µs; see table 8
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E
4 Electrical characteristics diagram
Eoss=f(VDS) ID=f(VDS); Tj=25 °C; parameter: VGS 0 50 100 150 200 250 300 350 400 450 500 V(DS) 1.4 1.2 0.8 0.6 0.4 0.2 VDS, Drain-source voltage (V) 16 12 8 4 0 VGS=5V 3 7V 8V 9V 6 10V Diagram 2: Typ. Coss stored energy Diagram 1: Typ. output characteristics VGS=f(Qgate); ID=1.2 A pulsed; parameter: VDD ID=f(VGS); parameter: Tj 6 5 4 3 Qg(nC) 2 1 0 400V VGS, Gate-source voltage (V) 10 8 6 4 2 0 25C 125C Diagram 4: Typ. gate charge Diagram 3: Typ. transfer characteristics ID, Drain current (A) ID, Drain current (A) E0ss(uJ) Vgs(V)
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E C=f(VDS); VGS=0 V; f=10 kHz VBR(DSS)=f(Tj); ID=10 mA Vds 500 400 300 200 100 0 1 Ciss Coss Crss 100 1000 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction temperature (℃) 700 750 800 850 900 Diagram 6: Typ. capacitances Diagram 5: Drain-source breakdown voltage BVDSS, Drain-source voltage (V) C (P F )
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table 10 Unclamped inductive load
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E
6 Package Outlines
Figure1：Outline PG‐TO220F
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E Figure2：Outline PG‐TO251
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E Figure3：Outline PG‐TO252
ASA65R1K3E,ASU65R1K3E,ASD65R1K3 E
Revision History
Revision Date Subjects (major changes since last revision) 1.0 2020-07-02 Preliminary version 1.1 2020-07-15 Add Package Name “TO251” and “TO252”