ASS8050-L-HF COMCHIP | Alldatasheet

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  • Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1. - AEC-Q101 Qualified. Circuit Diagram 1 2 1. Base 2. Emitter 3. Collector Dimensions in inches and (millimeter) SOT-23 1 2 0.055(1.40) 0.047(1.20) 0.118(3.00) 0.110(2.80) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.008(0.20) 0.004(0.10) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) Parameter Value Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous VCBO VCEO VEBO IC 1.5 V V V A Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Junction temperature TJ 150 °C Storage temperature range TSTG -55 to +150 °C Total device dissipation PD 300 mW

General Purpose Transistors SymbolParameter Conditions Max Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current 100 V V V nA V(BR)CEO V(BR)CBO V(BR)EBO IEBO IC = 100μA, IB = 0 IC = 100μA, IE = 0 IE = 100μA, IC = 0 VCE = 20V, IB = 0 Min Electrical Characteristics (at TA=25°C unless otherwise noted) Page 2 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. Collector cut-off current DC current gain 100 350 ICEO hFE(1) VEB = 5V, IC = 0 120 Collector-emitter saturation voltage Base-emitter saturation voltage 0.5 1.2 V V VCE(sat) VBE(sat) IC = 800mA, IB = 80mA Transition frequency fT VCE = 10Vdc, IC = 50mA, f = 30MHz 100 hFE(2) 40 AQW-JTR13 Collector cut-off current 100 ICBO VCB = 40V, IE = 0 VCE = 1V, IC = 100mA Small-signal characteristics nA nA MHz VCE = 1V, IC = 800mA IC = 800mA, IB = 80mA Range Rank Classification of hFE (1) ASS8050-L-HF ASS8050-H-HF 120-200 200-350

General Purpose Transistors Rating and Characteristic Curves (ASS8050-L-HF Thru. ASS8050-H-HF) Page 3 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD.AQW-JTR13 Collector Current, Ic (mA) 1 100 1000 0.4 0.6 0.2 1.2 0.8 Base-Emitter Saturation Voltage, VBE(sat) (V) 1.0 IC/IB=10 Ta=25°C Fig.3 - Base-Emitter Saturation Voltage vs. Collector Current Collector-Emitter Voltage, VCE (V) Collector Current, IC (mA) Fig.1 - Static Characteristic 100 120

140 Common

Ta = 25°C 400µA 100µA IB=50µA 150µA 200µA 250µA 300µA 350µA 450µA 500µA 1E-3 0.1 Collector Current, Ic (mA) Fig.4 - Collector-Emitter Saturation Voltage vs. Collector Current Ta=25°C 1 10 100 1000 0.01 IC/IB=10 Collector-Emitter Saturation Voltage, VCE(sat) (v) DC Current Gain, hFE 100 1000 Collector Current, IC (mA) Fig.2 - DC Current Gain 100 1000 ASS8050-H-HF ASS8050-L-HF Ta=25°C Common Emitter VCE=1V

General Purpose Transistors Reel Taping Specification A B C d E F P P0 P1 W (mm) (inch) SOT-23 SYMBOL (inch) SOT-23 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 − 0.004 0.437 ± 0.008 o D D1D2 − 0.00 − 0.000 Page 4 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD.AQW-JTR13

General Purpose Transistors Standard Packaging Case Type SOT-23 REEL (pcs) Reel Size (inch) 73,000 REEL PACK Suggested PAD Layout SIZE (inch) 0.035 (mm) 0.90 0.80 0.95 0.031 0.037 SOT-23 2.00 0.079 A B C D 2.90 0.114E A C B D E C Note: 1. The pad layout is for reference purposes only. Page 5 REV:ACompany reserves the right to improve product design , functions and reliability without notice. Comchip Technology CO., LTD. XX 1 2 xx/xxxx = Product type marking code AQW-JTR13 Y1 L