NFVA25012NP2T ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 16
Technical content
Features
- Automotive SPM® in 34 Pin DIP Package
- AEC & AQG324 Qualified and PPAP Capable
- 1200 V − 50 A 3−Phase IGBT Inverter with Integral Gate Drivers and Protection
- Low−Loss, Short−Circuit Rated IGBTs
- Very Low Thermal Resistance Using AlN DBC Substrate
- Built−In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout
- Separate Open−Emitter Pins from Low−Side IGBTs for Three−Phase Current Sensing
- Single−Grounded Power Supply Supported
- Built−In NTC Thermistor for Temperature Monitoring and Management
- Adjustable Over−Current Protection via Integrated Sense−IGBTs
- Isolation Rating of 2500 Vrms / 1 min
- This is a Pb−Free Device
Applications
- Automotive High V oltage Auxiliary Motors ♦ Climate E−Compressors ♦ Oil / Water Pumps ♦ Super / Turbo Chargers ♦ Variety Fans
- Motion Control ♦ Industrial Motor www.onsemi.com See detailed ordering and shipping information on page 14 of this data sheet.
ORDERING INFORMATION
(Click to Activate 3D Content) DIP34 80x33, AUTOMOTIVE MODULE CASE MODGL XXXXXXXXXXXX = Specific Device Code ZZZ = Lot ID AT = Assembly & Test Location Y = Year W = Work Week NNN = Serial Number
- AN−9075 − Users Guide for 1200V SPM® 2 Series
- AN−9076 − Mounting Guide for New SPM® 2 Package
- AN−9079 − Thermal Performance of 1200 V Motion SPM® 2 Series by Mounting Torque
- Integrated Power Functions
- Integrated Drive, Protection, and System Control Functions Integrated Power Functions
- 1200 V - 50 A IGBT inverter for three −phase DC / AC power conversion (Please refer to Figure 1) Integrated Drive, Protection and System Control Functions
- For inverter high −side IGBTs: gate drive circuit, high−voltage isolated high−speed level shifting control circuit Under −V oltage Lock−Out Protection (UVLO)
- For inverter low −side IGBTs: gate drive circuit, Short−Circuit Protection (SCP) control supply circuit Under −V oltage Lock −Out Protection (UVLO)
- Fault signaling: corresponding to UVLO (low −side supply) and SC faults
- Input interface: active−HIGH interface, works with 3.3 /
5 V logic, Schmitt−trigger input
Figure 1. Pin Configuration − Top View
www.onsemi.com PIN DESCRIPTION Pin Number Pin Name Pin Description
1 P Positive DC−Link Input
2 W Output for W Phase
3 V Output for V Phase
4 U Output for U Phase
5 NW Negative DC−Link Input for W Phase
6 NV Negative DC−Link Input for V Phase
7 NU Negative DC−Link Input for U Phase
8 RTH Series Resistor for Thermistor (Temperature Detection)
9 VTH Thermistor Bias Voltage
10 VDD(L) Low−Side Bias Voltage for IC and IGBTs Driving
11 COM(L) Low−Side Common Supply Ground
12 IN(UL) Signal Input for Low−Side U Phase
13 IN(VL) Signal Input for Low−Side V Phase
14 IN(WL) Signal Input for Low−Side W Phase
15 VFO Fault Output
16 CFOD Capacitor for Fault Output Duration Selection
17 CSC Shut Down Input for Short−Circuit Current Detection Input
18 RSC Resistor for Short−Circuit Current Detection
19 IN(UH) Signal Input for High−Side U Phase
20 COM(H) High−Side Common Supply Ground
21 VDD(UH) High−Side Bias Voltage for U Phase IC
22 VBD(U) Anode of Bootstrap Diode for U Phase High−Side Bootstrap Circuit
23 VB(U) High−Side Bias Voltage for U Phase IGBT Driving
24 VS(U) High−Side Bias Voltage Ground for U Phase IGBT Driving
25 IN(VH) Signal Input for High−Side V Phase
26 VDD(VH) High−Side Bias Voltage for V Phase IC
27 VBD(V) Anode of Bootstrap Diode for V Phase High−Side Bootstrap Circuit
28 VB(V) High−Side Bias Voltage for V Phase IGBT Driving
29 VS(V) High−Side Bias Voltage Ground for V Phase IGBT Driving
30 IN(WH) Signal Input for High−Side W Phase
31 VDD(WH) High−Side Bias Voltage for W Phase IC
32 VBD(W) Anode of Bootstrap Diode for W Phase High−Side Bootstrap Circuit
33 VB(W) High−Side Bias Voltage for W Phase IGBT Driving
34 VS(W) High−Side Bias Voltage Ground for W Phase IGBT Driving
Figure 2. Internal Block Diagram
- nverter low −side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection
- nverter power side is composed of four inverter DC −link input terminals and three inverter output terminals.
- Inverter high −side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
www.onsemi.com ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise noted) Symbol Rating Conditions Rating Unit INVERTER PART VPN Supply Voltage Applied between P − NU, NV, NW 900 V VPN(Surge) Supply Voltage (Surge) Applied between P − NU, NV, NW 1000 V VCES Collector − Emitter Voltage 1200 V ±IC Each IGBT Collector Current TC = 100°C, TJ ≤ 150°C, VDD ≥ 15 V (Note 4) 50 A ±ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ≤ 150°C, Under 1 ms Pulse Width (Note 4) 75 A PC Collector Dissipation TC = 25°C per One Chip (Note 4) 347 W TJ Operating Junction Temperature VCES = 960 V −40~150 °C VCES = 1200 V −40~125 °C CONTROL PART VDD Control Supply Voltage Applied between VDD(H), VDD(L) − COM 20 V VBS High−Side Control Bias Voltage Applied between VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) − COM −0.3~VDD + 0.3 V VFO Fault Output Supply Voltage Applied between VFO − COM −0.3~VDD + 0.3 V IFO Fault Output Current Sink Current at VFO pin 2 mA VSC Current Sensing Input Voltage Applied between CSC − COM −0.3~VDD + 0.3 V BOOSTSTRAP DIODE PART VRRM Maximum Repetitive Reverse Voltage 1200 V IF Forward Current TC = 25°C, TJ ≤ 150°C (Note 4) 1.0 A IFP Forward Current (Peak) TC = 25°C, TJ ≤ 150°C, Under 1 ms Pulse Width (Note 4) 2.0 A TJ Operating Junction Temperature (Note 6) −40~150 °C TOTAL SYSTEM tSC Short Circuit Withstand Time VDD = VBS ≤ 16.5 V, VPN ≤ 800 V, TJ = 150°C Non−repetitive 3 /C0109s TSTG Storage Temperature −40~150 °C VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate
2500 Vrms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4. These values had been made an acquisition by the calculation considered to design factor. THERMAL RESISTANCE Symbol Parameter Conditions Min Typ Max Unit Rth(j−c)Q Junction to Case Thermal Resistance (Note 5) Inverter IGBT part (per 1 / 6 module) − − 0.36 °C/W Rth(j−c)F Inverter FWD part (per 1 / 6 module) − − 0.66 °C/W L/C0115 Package Stray Inductance P to NU, NV, NW (Note 6) − 32 − nH 5. For the measurement point of case temperature (TC), please refer to Figure 1. DBC discoloration and Picker Circle Printing allowed, please refer to application note AN−9190 (Impact of DBC Oxidation on SPM® Module Performance). 6. Stray inductance per phase measured per IEC 60747 −15.
www.onsemi.com
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Min Typ Max Unit INVERTER PART (Tj as specified) VCE(SAT) Collector −Emitter Saturation Voltage VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 25°C − 2.20 2.80 V VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 150°C − 2.75 3.25 V VF FWDi Forward Voltage VIN = 0 V, IF = 50 A, TJ = 25°C − 2.40 3.00 V VIN = 0 V, IF = 50 A, TJ = 150°C − 2.25 2.85 V HS tON High Side Switching Times VPN = 600 V, VDD = 15 V, IC = 50 A, TJ = 25°C VIN = 0 V ↔ 5 V, Inductive Load See Figure 4 (Note 7) 0.90 1.40 2.00 /C0109s tC(ON) − 0.50 0.95 /C0109s tOFF − 1.10 1.70 /C0109s tC(OFF) − 0.15 0.55 /C0109s trr − 0.20 − /C0109s LS tON Low Side Switching Times VPN = 600 V, VDD = 15 V, IC = 50 A, TJ = 25°C VIN = 0 V ↔ 5 V, Inductive Load See Figure 4 (Note 7) 0.50 1.00 1.60 /C0109s tC(ON) − 0.50 0.95 /C0109s tOFF − 1.10 1.70 /C0109s tC(OFF) − 0.15 0.55 /C0109s trr − 0.25 − /C0109s ICES Collector − Emitter Leakage Current Tj = 25°C, VCE = VCES − − 3 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. t ON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 3. Figure 3. Switching Time Definition
www.onsemi.com Symbol Parameter Conditions Min Typ Max Unit BOOTSTRAP DIODE PART (Tj as specified) VF Forward Voltage IF = 1.0 A, TJ = 25°C − 2.2 − V trr Reverse−Recovery Time IF = 1.0 A, dIF / dt = 50 A/ms, TJ = 25°C − 80 − ns CONTROL PART (Tj = 25°C unless otherwise noted) IQDDH Quiescent VDD Supply Current VDD(UH,VH,WH) = 15 V, IN(UH,VH,WH) = 0 V VDD(UH) − COM(H), VDD(VH) − COM(H), VDD(WH) − COM(H) − − 0.15 mA IQDDL VDD(L) = 15 V, IN(UL,VL, WL) = 0 V VDD(L) − COM(L) − − 4.80 mA IPDDH Operating VDD Supply Current VDD(UH,VH,WH) = 15 V, fPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High−Side VDD(UH) − COM(H), VDD(VH) − COM(H), VDD(WH) − COM(H) − − 0.30 mA IPDDL VDD(L) = 15V, fPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for Low−Side VDD(L) − COM(L) − − 15.5 mA IQBS Quiescent VBS Supply Current VBS = 15 V, IN(UH,VH,WH) = 0 V VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) − − 0.30 mA IPBS Operating VBS Supply Current VDD = VBS = 15 V, fPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High−Side VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) − − 12.0 mA VFOH Fault Output Voltage VDD = 15 V, VSC = 0 V, VFO Circuit: 4.7 k/C0087 to 5 V Pull−up 4.5 − − V VFOL VDD = 15 V, VSC = 1 V, VFO Circuit: 4.7 k/C0087 to 5 V Pull−up − − 0.5 V ISEN Sensing Current of Each Sense IGBT VDD = 15 V, VIN = 5 V, RSC = 0 /C0087, No Connection of Shunt Resistor at NU,V,W Terminal IC = 50 A − 43 − mA VSC(ref) Short Circuit Trip Level VDD = 15 V (Note 8) CSC − COM(L) 0.43 0.50 0.57 V ISC Short Circuit Current Level for Trip RSC = 13 /C0087 (±1%), No Connection of Shunt Resistor at NU,V,W Terminal (Note 8) − 75 − A UVDDD Supply Circuit Under−Voltage Protection Detection Level 10.3 − 12.8 V UVDDR Reset Level 10.8 − 13.3 V UVBSD Detection Level 9.5 − 12.0 V UVBSR Reset Level 10.0 − 12.5 V tFOD Fault−Out Pulse Width CFOD = Open (Note 9) 50 − − /C0109s CFOD = 2.2 nF 1.7 − − ms VIN(ON) ON Threshold Voltage Applied between IN(UH,VH,WH) − COM(H), IN(UL,VL,WL) − COM(L) − − 2.6 V VIN(OFF) OFF Threshold Voltage 0.8 − − V RTH Resistance of Thermistor at TTH = 25°C See Figure 6 (Note 10) − 47 − k/C0087 at TTH = 100°C − 2.9 − k/C0087 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Short −circuit current protection functions only at the low−sides because the sense current is divided from main current at low−side IGBTs. Inserting the shunt resistor for monitoring the phase current at N U, NV, NW terminal, the trip level of the short−circuit current is changed. 9. The fault −out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: tFOD = 0.8 x 106 x CFOD [s]. 10.TTH is the temperature of thermistor itself. T o know case temperature (TC), conduct experiments considering the application.
the Recommended Operating Ranges limits may affect device reliability.
- This product might not make output response if input pulse width is less than the recommended value.
Figure 7. Flatness Measurement Position
Figure 10. Under-Voltage Protection (High-Side) b1: Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when the next input is applied. b2: Normal operation: IGBT ON and carrying current. b3: Under-voltage detection (UVBSD). b4: IGBT OFF in spite of control input condition, but there is no fault output signal. b6: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Figure 13. Typical Application Circuit 15.To avoid malfunction, the wiring of each input should be as short as possible (less than 2 − 3 cm). that makes IFO up to 2 mA. Please refer to Figure 13. 17.Fault out pulse width can be adjust by capacitor C5 connected to the CFOD terminal. filter and RSC terminal should be divided at the point that is close to the terminal of sense resistor R5. 22.For stable protection function, use the sense resistor R5 with resistance variation within 1% and low inductance value. vary wiring pattern layout and value of the R6C6 time constant. 24.Each capacitor should be mounted as close to the pins of the ASPM34 product as possible. use of a high−frequency non−inductive capacitor of around 0.1~0.22 /C0109F between the P & GND pins is recommended. between the MCU and the relays. of control supply terminals (recommended Zener diode is 22 V / 1 W, which has the lower Zener impedance characteristic than about 15/C0087). 28.C2 of around seven times larger than bootstrap capacitor C3 is recommended. with good temperature and frequency characteristics in C4.
www.onsemi.com PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Shipping NFVA25012NP2T NFVA25012NP2T ASPM34−CAA (Pb−Free)
6 Units/Tube
SPM is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
DIP34 80x33, AUTOMOTIVE MODULE CASE MODGL ISSUE O DATE 19 OCT 2018 XXXX = Specific Device Code ZZZ = Lot ID AT = Assembly & Test Location Y = Year W = Work Week NNN = Serial Number *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. GENERIC MARKING DIAGRAM* XXXXXXXXXXX ZZZ ATYWW NNNNNNN MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON97156GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1DIP34 80x33, AUTOMOTIVE MODULE © Semiconductor Components Industries, LLC, 2018 www.onsemi.com
www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative