ASA65R350E SY | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 13
Technical content
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E MOSFET Silicon N-Channel MOS 1. Applications PFC stages, hard switching PWM stages and resonant switching PWM PC, Silver box, Adaptor, LCD & PDP TV, Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance: RDS(ON) = 0.318Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 350 mΩ Qg,typ 22 Nc ID,pulse 33 A 3. Packaging and Internal Circuit Part Name Package Marking ASA65R350E TO220F ASA65R350E ASU65R350E TO251 ASU65R350E ASD65R350E TO252 ASD65R350E ASP65R350E TO220 ASP65R350E TO220F TO251 TO252 TO220
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E
1 Maximum ratings
at Tj = 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 11 A TC=25° C Pulsed drain current2) ID,pulse - - 33 A TC=25° C Avalanche energy, single pulse EAS - - 624 mJ Tc=25℃,VDD=50V,L = 49.9mH, RG=25Ω Avalanche current, single pulse IAR - - 5 A Tc=25℃,VDD=50V,L = 49.9mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 69 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (TO220F) Ptot 31 W TC=25° C Power dissipation(TO251,TO252 ,TO220) Ptot 83 W TC=25° C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Soldering Temperature Distance of 1.6mm from case for 10s TL 260 °C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V, ISD<=48A, Tj=25° C see table 8 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E
2 Thermal characteristics
Table 3 Thermal characteristics（TO220 FullPAK） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 4.0 ° C/W - Thermal resistance, junction - ambient RthJA - - 80 ° C/W device on PCB, minimal footprint Thermal characteristics（TO251,TO252,TO220） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 1.5 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E
3 Electrical characteristics
at Tj=25° C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 655 - - V VGS=0V, ID=250uA Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA Zero gate voltage drain current IDSS - - 1 uA VDS=650V, VGS=0V, Tj=25° C Gate-source leakage current IGSS - - 100 nA VGS=20V, VDS=0V Drain-source on-state resistance RDS(on) - 0.318 0.35 Ω VGS=10V, ID=5.5A, Tj=25° C Gate resistance (Intrinsic) RG - 11 - f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 901 - pF VGS=0V, VDS=50V, f=10kHz Output capacitance Coss - 59 - pF VGS=0V, VDS=50V, f=10kHz Reverse transfer capacitance Crss - 5.3 - pF VGS=0V, VDS=50V, f=10kHz Turn-on delay time td(on) - 7.2 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Rise time tr - 20.8 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Turn-off delay time td(off) - 29.2 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Fall time tf - 19.2 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 5.8 - nC VDD=400V, ID=4.8A, VGS=0 to 10V Gate to drain charge Qgd - 17 - nC VDD=400V, ID=4.8A, VGS=0 to 10V Gate charge total Qg - 22 - nC VDD=400V, ID=4.8A, VGS=0 to 10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V, ID=4.8A, VGS=0 to 10V
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.74 - V VGS=0V, IF=1A, Tj=25° C Reverse recovery time trr - 250 - ns VR=400V, IF=4.8 A, diF/dt=100A/µ s; see table 8 Reverse recovery charge Qrr - 2.572 - uC VR=400V, IF=4.8 A, diF/dt=100A/µ s; see table 8 Peak reverse recovery current Irrm - 19.6 - A VR=400V, IF=4.8 A, diF/dt=100A/µ s; see table 8
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E
4 Electrical characteristics diagram
Diagram 1: Typ. output characteristics Diagram 2: Typ. Coss stored energy ID=f(VDS);Tj=25 ° C; parameter: VGS Eoss=f(VDS) Diagram 3: Typ. transfer characteristics Diagram 4: Typ. gate charge ID=f(VGS);parameter: Tj VGS=f(Qgate);ID=4.8A pulsed; parameter: VDD 0 5 10 15 20 ID, Drain current (A) VDS, Drain-source voltage (V) 10V VGS=5V
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E Diagram 5: Drain-source breakdown voltage Diagram 6: Typ. capacitances VBR(DSS)=f(Tj);ID=10mA C=f(VDS);VGS=0V; f=10 kHz
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table10 Unclamped inductive load
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E
6 Package Outlines
Figure1：Outline PG‐TO220F(HT)
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E Figure2：OutlinePG-TO252(HT)
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E Figure3：OutlinePG-TO251
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E Figure4：OutlinePG-TO220(HT)
ASA65R350E, ASU65R350E, ASD65R350E,ASP65R350E
Revision History
Revision Date Subjects (major changes since last revision) 0.1 2019-04-12 Preliminary version 1.0 2019-11-07 Fine tune outline and add Crss test data.etc 1.1 2020-03-30 Add Electrical characteristics Curve 1.2 2020-04-18 Add avalanche energy test condition, avalanche current data and test condition 1.3 2022-05-11 Add TO220 package