ASA65R550E SY | Alldatasheet

Document overview

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Technical content

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward topologies. PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance: RDS(ON) = 0.50Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters 3. Packaging and Internal Circuit Part Name Package Marking ASA65R550E TO220F ASA65R550E ASU65R550E TO251 ASU65R550E ASD65R550E TO252 ASD65R550E ASE65R550E SOT223 ASE65R550E TO220F TO251 TO252 SOT223 Parameter Value Unit VDS @Tj,max 700 V RDS(on),max 550 mΩ Qg,typ 8.0 nC ID,pulse 24 A

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E

1 Maximum ratings

at Tj= 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 8 A TC=25° C （设计参 数） Pulsed drain current2) ID,pulse - - 24 A TC=25° C Avalanche energy, single pulse EAS - - 624 mJ Tc=25℃,VDD=50V,L =10mH, RG=25Ω Avalanche current, single pulse IAR - - 7 A Tc=25℃,VDD=50V,L =10mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 15 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC(f>1Hz) Power dissipation (TO220F) Ptot - - 28 W TC=25° C Power dissipation (TO252&TO251) Ptot - - 63 W TC=25° C Power dissipation (SOT223) Ptot - - 7 W TC=25° C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Reverse diode dv/dt3) dv/dt V/ns VDS=0...400V,ISD<=48A,Tj=25° C seetable8 1) Limited by Tj,max. Maximum Duty Cycle D=0.50 2) Pulse width tp limited by Tj, max 3) Identical low side and high sides witch with identic

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E

2 Thermal characteristics

Table 3 Thermalcharacteristics（TO220 FullPAK） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 4.5 ° C/W - Thermal resistance, junction - ambient RthJA - - 80 ° C/W device on PCB, minimal footprint Thermalcharacteristics（TO251 and TO252） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint Thermalcharacteristics（SOT223） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction -solder point RthJC - - 18 ° C/W - Thermal resistance, junction - ambient RthJA - - 160 ° C/W device on PCB, minimal footprint

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E

3 Electrical characteristics

at Tj=25° C,unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source break down voltage V(BR)DSS 655 - - V VGS=0V,ID=250uA Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS,ID=250uA Zero gate voltage drain current IDSS 1 uA VDS=650V,VGS=0V,Tj=25° C Gate-source leakage current IGSS - - 100 nA VGS=30V,VDS=0V Drain-source on-state resistance RDS(on) - 0.50 0.55 Ω VGS=10V,ID=4A,Tj=25° C Gate resistance RG - 25 - f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 599 - pF VGS=0V,VDS=50V,f=10kHz Output capacitance Coss - 76 - pF VGS=0V,VDS=50V,f=10kHz Reverse transfer capacitance Crss - 3.55 - pF VGS=0V, VDS=50V, f=10kHz Turn-on delay time td(on) - 26.8 ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;see table 9 Risetime tr - 24.8 ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;see table 9 Turn-off delay time td(off) - 127.6 ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;see table 9 Fall time tf - 21.2 ns VDD=400V,VGS=13V,ID=3A, RG=6.8Ω;see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 2.6 - nC VDD=400V, ID=3A, VGS=0 to 10V Gate to drain charge Qgd - 1.7 - nC VDD=400V, ID=3A, VGS=0 to 10V Gate charge total Qg - 8.0 - nC VDD=400V, ID=3A, VGS=0 to 10V Gate plateau voltage Vplateau - 6.6 - V VDD=400V, ID=3A, VGS=0 to 10V

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.76 - V VGS=0V,IF=1A,Tj=25° C Reverse recovery time trr 174 ns VR=400V, IF=3 A, diF/dt=100A/µ s; see table 8 Reverse recovery charge Qrr 1.2 uC VR=400V, IF=3 A, diF/dt=100A/µ s; see table 8 Peak reverse recovery current Irrm 13.5 A VR=400V, IF=3 A, diF/dt=100A/µ s; see table 8

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E

4 Electrical characteristics diagram

Diagram 1: Typ. output characteristics Diagram 2: Typ. Coss stored energy ID=f(VDS);Tj=25 ° C; parameter: VGS Eoss=f(VDS) Diagram 3: Typ. transfer characteristics Diagram 4: Typ. gate charge ID=f(VGS);parameter: Tj VGS=f(Qgate);ID=3A pulsed; parameter: VDD

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E Diagram 5: Drain-source breakdown voltage Diagram 6: Typ. capacitances VBR(DSS)=f(Tj);ID=10mA C=f(VDS);VGS=0V; f=10 kHz

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E

5 Test Circuits

Table 8 Diode characteristics Table 9 Switching times

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E Table10 Unclamped inductive load

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E

6 Package Outlines

Figure1：OutlinePG-TO220F(HT)

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E Figure2：Outline PG-TO252(HT)

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E Figure3：OutlinePG-TO251

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E Figure3：OutlinePG-SOT223

ASA65R550E, ASU65R550E, ASD65R550E, ASE65R550E

Revision History

Revision Date Subjects (major changes since last revision) 1.0 2019-04-11 Preliminary version 1.1 2020-03-30 Fine tune outline and add Crss test data etc. Add Electrical characteristics Curve 1.2 2020-04-18 Add avalanche energy test condition, avalanche current data and test condition 1.3 2021-02-03 Add part“ASE65R550E” 1.4 2022-06-14 Updated TO220F&TO252 POD to HT