ASA70R380E SY | Alldatasheet
Document overview
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Technical content
ASA70R380E, ASD70R380E, ASB70R380E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance: RDS(ON) = 0.346Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 750 V RDS(on),max 380 mΩ Qg,typ 22 nC ID,pulse 33 A 3. Packaging and Internal Circuit Part Name Package Marking ASA70R380E TO220F ASA70R380E ASD70R380E TO252 ASD70R380E ASB70R380E TO263 ASB70R380E TO220F TO252 TO263
ASA70R380E, ASD70R380E, ASB70R380E
1 Maximum ratings
at Tj = 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 11 A TC=25° C Pulsed drain current2) ID,pulse - - 33 A TC=25° C Avalanche energy, single pulse EAS - - 624 mJ Tc=25℃,VDD=50V,L =10mH, RG=25Ω Avalanche current, single pulse IAR - - 6 A Tc=25℃,VDD=50V,L =10mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 69 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (TO220F) Ptot - - 31 W TC=25° C Power dissipation (TO252&TO263) Ptot - - 83 W TC=25° C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Soldering Temperature Distance of 1.6mm from case for 10s TL 260 °C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V, ISD<=48A, Tj=25° C see table 8 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
ASA70R380E, ASD70R380E, ASB70R380E
2 Thermal characteristics
Table 3 Thermalcharacteristics（TO220 FullPAK） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 4 ° C/W - Thermal resistance, junction - ambient RthJA - - 80 ° C/W device on PCB, minimal footprint Thermalcharacteristics（TO252 and TO263） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 1.5 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint
ASA70R380E, ASD70R380E, ASB70R380E
3 Electrical characteristics
at Tj=25° C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 705 - - V VGS=0V, ID=250uA Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA Zero gate voltage drain current IDSS - - 1 uA VDS=700V, VGS=0V, Tj=25° C Gate-source leakage current IGSS - - 100 nA VGS=30V, VDS=0V Drain-source on-state resistance RDS(on) - 0.346 0.38 Ω VGS=10V, ID=5.5A, Tj=25° C Gate resistance RG - 11.2 - Ω f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 901 - pF VGS=0V, VDS=50V, f=10kHz Output capacitance Coss - 59 - pF VGS=0V, VDS=50V, f=10kHz Reverse transfer capacitance Crss - 5.3 - pF VGS=0V, VDS=50V, f=10kHz Turn-on delay time td(on) - 7.2 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Rise time tr - 20.8 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Turn-off delay time td(off) - 29.2 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Fall time tf - 19.2 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4Ω;see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 5.8 - nC VDD=400V, ID=4.8A, VGS=0 to 10V Gate to drain charge Qgd - 17 - nC VDD=400V, ID=4.8A, VGS=0 to 10V Gate charge total Qg - 22 - nC VDD=400V, ID=4.8A, VGS=0 to 10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V, ID=4.8A, VGS=0 to 10V
ASA70R380E, ASD70R380E, ASB70R380E Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.74 - V VGS=0V, IF=1A, Tj=25° C Reverse recovery time trr - 250 - ns VR=400V, IF=4.8 A, diF/dt=100A/µ s; see table 8 Reverse recovery charge Qrr - 2.572 - uC VR=400V, IF=4.8 A, diF/dt=100A/µ s; see table 8 Peak reverse recovery current Irrm - 19.6 - A VR=400V, IF=4.8 A, diF/dt=100A/µ s; see table 8
ASA70R380E, ASD70R380E, ASB70R380E
4 Electrical characteristics diagram
Diagram 1: Typ. output characteristics Diagram 2: Typ. Coss stored energy ID=f(VDS);Tj=25 ° C; parameter: VGS Eoss=f(VDS) Diagram 3: Typ. transfer characteristics Diagram 4: Typ. gate charge ID=f(VGS);parameter: Tj VGS=f(Qgate);ID=4.8A pulsed; parameter: VDD
ASA70R380E, ASD70R380E, ASB70R380E Diagram 5: Drain-source breakdown voltage Diagram 6: Typ. capacitances VBR(DSS)=f(Tj);ID=10mA C=f(VDS);VGS=0V; f=10 kHz
ASA70R380E, ASD70R380E, ASB70R380E
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table10 Unclamped inductive load
ASA70R380E, ASD70R380E, ASB70R380E
6 Package Outlines
Figure1：Outline PG‐TO220F(HT)
ASA70R380E, ASD70R380E, ASB70R380E Figure2：Outline PG‐TO252(HT)
ASA70R380E, ASD70R380E, ASB70R380E Figure3：Outline PG‐TO263(HC)
ASA70R380E, ASD70R380E, ASB70R380E
Revision History
Revision Date Subjects (major changes since last revision) 1.0 2019-05-08 Preliminary version 1.1 2020-03-30 Fine tune outline and add Crss test data etc. Add Electrical characteristics Curve 1.2 2020-04-18 Add avalanche energy test condition, avalanche current data and test condition 1.3 2022-06-14 Updated TO220F&TO252 POD to HT and TO263 POD to HC