ASA65R220E SY | Alldatasheet
Document overview
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Technical content
ASA65R220E, ASB65R220E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback ortwo-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor, LCD & PDP TV, LED Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters 3. Packaging and Internal Circuit Part Name Package Marking ASA65R220E TO220F ASA65R220E ASB65R220E TO263 ASB65R220E Parameter Value Unit VDS @Tj,max 700 V RDS(on),max 220 mΩ Qg,typ 32.23 nC ID,pulse 60 A TO220F TO263
ASA65R220E, ASB65R220E
1 Maximum ratings
at Tj= 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 21 A TC=25° C Pulsed drain current2) ID,pulse - - 84 A TC=25° C Avalanche energy, single pulse EAS - - 830 mJ Tc=25℃,VDD=50V,L= 10mH, RG=25Ω Avalanche current, single pulse IAR - - 7 A Tc=25℃,VDD=50V,L= 10mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 69 V/ns VDS=0...400V Gate source voltage (static) VGS -30 - 30 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC(f>1Hz) Power dissipation (TO220F) Ptot - - 33 W TC=25° C Power dissipation (TO263) Ptot - - 126 W TC=25° C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=48A,Tj=25° C seetable8 1) Limited by Tj,max. Maximum Duty Cycle D=0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high sides witch with identical RG
ASA65R220E, ASB65R220E
2 Thermal characteristics
Table 3 Thermal characteristics（TO220 FullPAK） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.8 ° C/W - Thermal resistance, junction - ambient RthJA - - 80 ° C/W device on PCB, minimal footprint Thermalcharacteristics（TO263） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.99 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint
ASA65R220E, ASB65R220E
3 Electrical characteristics
at Tj=25° C,unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=250uA Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS,ID=250uA Zero gate voltage drain current IDSS - - uA VDS=650V, VGS=0V, Tj=25°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.19 0.22 Ω VGS=10V,ID=7A,Tj=25° C Gate resistance RG - 5.5 - Ω f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 1547 - pF VGS=0V, VDS=50V, f=10kHz Output capacitance Coss - 134 - pF VGS=0V, VDS=50V, f=10kHz Reverse transfer capacitance Crss - 5.28 - pF VGS=0V, VDS=50V, f=10kHz Turn-on delay time td(on) 12.4 ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;see table 9 Risetime tr 21.6 ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;see table 9 Turn-off delay time td(off) ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;see table 9 Fall time tf 18.8 ns VDD=400V,VGS=13V,ID=8A, RG=3.4Ω;see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 8.242 - nC VDD=400V,ID=8A,VGS=0 to 10V Gate to drain charge Qgd 10.85 - nC VDD=400V,ID=8A,VGS=0 to 10V Gate charge total Qg - 32.23 - nC VDD=400V,ID=8A,VGS=0 to 10V Gate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=8A,VGS=0 to 10V
ASA65R220E, ASB65R220E Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.72 - V VGS=0V,IF=1A,Tj=25° C Reverse recovery time trr 275 ns VR=400V,IF=8A,diF/dt=100A/µ s; seetable8 Reverse recovery charge Qrr 3.809 µC VR=400V,IF=8A,diF/dt=100A/µ s; seetable8 Peak reverse recovery current Irrm 25.6 A VR=400V,IF=8A,diF/dt=100A/µ s; seetable8
ASA65R220E, ASB65R220E
4 Electrical characteristics diagram
Diagram 1: Typ. output characteristics Diagram 2: Typ. Coss stored energy ID=f(VDS);Tj=25 ° C; parameter: VGS Eoss=f(VDS) Diagram 3: Typ. transfer characteristics Diagram 4: Typ. gate charge ID=f(VGS);parameter: Tj VGS=f(Qgate);ID=8A pulsed; parameter: VDD
ASA65R220E, ASB65R220E Diagram 5: Drain-source breakdown voltage Diagram 6: Typ. capacitances VBR(DSS)=f(Tj);ID=10mA C=f(VDS);VGS=0V; f=10 kHz Diagram 7: Maximum id vs Junction Temperature Diagram 8: Safe Operating Area VBR(DSS)=f(Tj);ID=10mA C=f(VDS);VGS=0V; f=10 kHz
ASA65R220E, ASB65R220E
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table 10 Unclamped inductive load
ASA65R220E, ASB65R220E
6 Package Outlines
Figure1：Outline PG‐TO220F(HT)
ASA65R220E, ASB65R220E Figure2：Outline PG‐TO263(LM)
ASA65R220E, ASB65R220E
Revision History
Revision Date Subjects (major changes since last revision) 0.1 2019-05-27 Preliminary version 1.0 2019-11-07 Fine tune outline and add Crss test data etc. 1.1 2020-03-16 Update key Parameters 1.2 2020-03-31 Add Electrical characteristics Curve 1.3 2020-04-18 Add avalanche energy test condition, avalanche current data and test condition 1.4 2021-12-19 Updated Idss limit, Vth test condition and TO220F POD to HT 1.5 2023-04-12 Updated TO263 POD to LM and Rg&EAS