ASB0320 ANACHIP | Alldatasheet
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SMD Schottky Barrier Diode This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 2, 2004 Features 350mA IO = 40V to 20V VR = - Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device Mechanical Data - Case : 0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. - Polarity : Indicated by cathode band. - Mounting position : Any. - Weight : BD:0.003gram (approximately) BF:0.006gram (approximately) General Description 0.010(0.25)Typ. 0.014(0.35)Typ. 0.039(1.00) 0.031(0.80) 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) 0603(1608) 0.071(1.80) 0.063(1.60) 0.012(0.30)Typ. 0.014(0.35)Typ. 0.014(0.35)Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 1005(2512) 0.102(2.60) 0.095(2.40) 0.012(0.30)Typ. Ordering information A XX 03X0 XX BD-0603 Package type Feature BF-1005 SB : Schottky Barrier Part No. 2: ASB0320 3: ASB0330 4: ASB0340
SMD Schottky Barrier Diode Anachip Corp. Maximum Rating (at TA=25ºC unless otherwise noted) Symbol Parameter ASB0320 ASB0330 ASB0340 Unit VRRM, VR Repetitive peak reverse voltage Reverse voltage V VR(RMS) RMS reverse voltage V IO Average forward rectified current 350 mA IFRM Repetitive peak forward current 450 mA IFSM Forward current, surge peak 8.3 ms single half sine-wave 1.5 A TSTG Storage temperature -40 to +125 ºC Tj Junction temperature -40 to +125 ºC Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit IF=20mA 0.37 VF Forward voltage IF=200mA 0.6 V ASB0320 ASB0330 IR Reverse current ASB0340 VR=10V VR=20V VR=30V uA CT Capacitance between terminals f=1MHz, and 0 VDC reverse voltage pF Trr Reverse recovery time IF=IR=10mA, Irr=0.1×IR, RL=100 ohm 6.4 nS
SMD Schottky Barrier Diode Anachip Corp. Rating And Characteristic Curves Fig. 1 – Forward characteristics Fig. 2 – Capacitance between terminals characteristics Fig. 3 – Current derating curve Marking Information ASB0320 BH ASB0330 BJ ASB0340 BK