ASB00340 ANACHIP | Alldatasheet
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SMD Schottky Barrier Diode This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 2, 2004 Features 30mAIO = 40VVR = - Designed for mounting on small surface. - Extremely thin package. - Low capacitance. - Majority carrier conduction - Lead-free device Mechanical Data - Case :0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. - Polarity : Indicated by cathode band. - Mounting position : Any. - Weight : BD:0.003gram (approximately) BF:0.006gram (approximately) General Description 0.010(0.25)Typ. 0.014(0.35)Typ. 0.039(1.00) 0.031(0.80) 0.033(0.85) 0.028(0.70) Dimensions in inches and (millimeter) 0603(1608) 0.071(1.80) 0.063(1.60) 0.012(0.30)Typ. 0.014(0.35)Typ. 0.014(0.35)Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 1005(2512) 0.102(2.60) 0.095(2.40) 0.012(0.30)Typ. Ordering information AX X XXX XX XX lo Vo BD-0603 Package typeFeature BF-1005 SB : Schottky Barrier
SMD Schottky Barrier Diode Anachip Corp. Maximum Rating (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit VRRM Repetitive peak reverse voltage - - 45 V VR Reverse voltage - - 40 V IO Average forward current - - 30 mA 0603 - 500 - IFSM Forward current, surge peak 1005 8.3ms single half sine-wave superimposed on rate load (JEDEC method) - 500 - mA 0603 - - 150 PD Power Dissipation 1005 - - 200 mW TSTG Storage temperature -40 - +125 ºC Tj Junction temperature -40 - +125 ºC Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward voltage I F=1mADC - - 0.37 V VR=30V - - 0.5 IR Reverse current VR=40V - - 1 µA CT Capacitance between terminals F=1MHz, and 1 VDC reverse voltage - 1.5 - pF
SMD Schottky Barrier Diode Anachip Corp. Rating And Characteristic Curves -25 C 25 C 75 C 125 C Ambient temperature ( C ) f = 1 MHz Ta = 25 C Marking Information B2 ASB00340