ASA65R300E SY | Alldatasheet
Document overview
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Technical content
ASA65R300E, ASD65R300E,ASB65R300E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor, LCD & PDP TV, LED Lighting, Server power, UPS application. 2. Features Low drain-source on-resistance: RDS(ON) = 0.278Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 300 mΩ Qg,typ 22.94 nC ID,pulse 45 A 3. Packaging and Internal Circuit Part Name Package Marking ASA65R300E TO220F ASA65R300E ASD65R300E TO252 ASD65R300E ASB65R300E TO263 ASB65R300E TO220F TO252 TO263
ASA65R300E, ASD65R300E,ASB65R300E
1 Maximum ratings
at Tj = 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 15 A TC=25° C Pulsed drain current2) ID,pulse - - 45 A TC=25° C Avalanche energy, single pulse EAS - - 500 mJ Tc=25℃,VDD=50V,L=10mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 124 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation(TO220F) Ptot - - 32 W TC=25° C Power dissipation (TO252/263) Ptot - - 118 W TC=25° C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Soldering Temperature Distance of 1.6mm from case for 10s TL 260 °C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V, ISD<=IS, Tj=25° C see table 8 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
ASA65R300E, ASD65R300E,ASB65R300E
2 Thermal characteristics
Table 3 Thermal characteristics（TO220 FullPAK） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.9 ° C/W - Thermal resistance, junction - ambient RthJA - - 80 ° C/W device on PCB, minimal footprint Thermal characteristics（TO252/263） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 1.06 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint
ASA65R300E, ASD65R300E,ASB65R300E
3 Electrical characteristics
at Tj=25° C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 655 - - V VGS=0V, ID=250uA Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA Zero gate voltage drain current IDSS - - 1 uA VDS=650V, VGS=0V, Tj=25° C Gate-source leakage current IGSS - - 100 nA VGS=20V, VDS=0V Drain-source on-state resistance RDS(on) - 0.278 0.30 Ω VGS=10V, ID=7.5A, Tj=25° C Gate resistance (Intrinsic) RG - 5.7 - f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 1020 - pF VGS=0V, VDS=50V, f=10kHz Output capacitance Coss - 108 - pF VGS=0V, VDS=50V, f=10kHz Reverse transfer capacitance Crss - 5.11 - pF VGS=0V, VDS=50V, f=10kHz Turn-on delay time td(on) - 8.4 - ns VDD=400V, ID=3.8A,RG=10Ω ; see table 9 Rise time tr - 21.2 - ns VDD=400V, ID=3.8A,RG=10Ω ; see table 9 Turn-off delay time td(off) - 32.4 - ns VDD=400V, ID=3.8A,RG=10Ω ; see table 9 Fall time tf - 20.8 - ns VDD=400V, ID=3.8A,RG=10Ω ; see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 5.7 - nC VDD=400V, ID=3.8A, VGS=10V Gate to drain charge Qgd - 13.6 - nC VDD=400V, ID=3.8A, VGS=10V Gate charge total Qg - 22.94 - nC VDD=400V, ID=3.8A, VGS=10V Gate plateau voltage Vplateau - 5.4 - V VDD=400V, ID=3.8A, VGS=10V
ASA65R300E, ASD65R300E,ASB65R300E Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.74 - V VGS=0V, IF=1 A, Tj=25° C Reverse recovery time trr - 216 - ns VR=400V, IF=2A, diF/dt=100A/µ s; see table 8 Reverse recovery charge Qrr - 1.3 - uC VR=400V, IF=2A, diF/dt=100A/µ s; see table 8 Peak reverse recovery current Irrm - 16.7 - A VR=400V, IF=2A, diF/dt=100A/µ s; see table 8
ASA65R300E, ASD65R300E,ASB65R300E Eoss=f(VDS) ID=f(VDS);Tj=25 ° C; parameter: VGS Diagram 2: Typ. Coss stored energy Diagram 1: Typ. output characteristics
4 Electrical characteristics diagram
VGS=f(Qgate);ID=3.8A pulsed; parameter: VDD ID=f(VGS);parameter: Tj VGS, Gate-source voltage (V) 25C Diagram 4: Typ. gate charge Diagram 3: Typ. transfer characteristics ID, Drain current (A) ID, Drain current (A) Vgs(V) Eoss(uJ)
ASA65R300E, ASD65R300E C a p a c ita n c e ( P F ) Diagram 5: Drain-source breakdown voltage Diagram 6: Typ. Capacitances 1000 ciss coss 100 crss 0 20 40 60 80 100 VDS (V) VBR(DSS)=f(Tj);ID=10mA C=f(VDS);VGS=0V; f=10 kHz
ASA65R300E, ASD65R300E,ASB65R300E
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table10 Unclamped inductive load
ASA65R300E, ASD65R300E,ASB65R300E
6 Package Outlines
Figure1：Outline PG‐TO220F(HT)
ASA65R300E, ASD65R300E,ASB65R300E Figure2：OutlinePG‐TO252(HT)
ASA65R300E, ASD65R300E,ASB65R300E Figure3：OutlinePG‐TO263(HC)
ASA65R300E, ASD65R300E,ASB65R300E
Revision History
Revision Date Subjects (major changes since last revision) 1.0 2020-07-24 Preliminary version 1.1 2022-06-19 Updated TO220F&TO252 POD to HT 1.2 2022-11-16 Added TO263 package