ASA65R150E SY | Alldatasheet
Document overview
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Technical content
ASA65R150E, ASM65R150E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor, LCD & PDP TV, LED Lighting, Server power, Telecom power, and UPS Application. 2. Features Low drain-source on-resistance: RDS(ON) = 0.130Ω (typ.) Easy to control Gate switching Enhancement mode: Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters 3. Packaging and Internal Circuit Part Name Package Marking ASA65R150E TO220F ASA65R150E ASM65R150E DFN8x8 ASM65R150E Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 150 mΩ Qg,typ 47.6 nC ID,pulse 84 A TO220F DFN8x8
ASA65R150E, ASM65R150E
1 Maximum ratings
at Tj = 25° C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - 28 A TC=25° C Pulsed drain current2) ID,pulse - - 84 A TC=25° C Avalanche energy, single pulse EAS - - 605 mJ Tc=25℃,VDD=50V,L= 10mH, RG=25Ω Avalanche current, single pulse IAR - - 11 A Tc=25℃,VDD=50V,L= 10mH, RG=25Ω MOSFET dv/dt ruggedness dv/dt - - 69 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (TO220F) Ptot - - 34 W TC=25° C Power dissipation (DFN8x8) Ptot - - 176 W TC=25° C Storage temperature Tstg -55 - 150 °C Operating junction temperature Tj -55 - 150 °C Soldering Temperature Distance of 1.6mm from case for 10s TL 260 °C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V, ISD<=48A, Tj=25° C see table 8 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG
ASA65R150E, ASM65R150E
2 Thermal characteristics
Table 3 Thermal characteristics (TO220F) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 3.78 ° C/W - Thermal resistance, junction - ambient RthJA - - 80 ° C/W device on PCB, minimal footprint Thermal characteristics（DFN8x8） Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Thermal resistance, junction - case RthJC - - 0.71 ° C/W - Thermal resistance, junction - ambient RthJA - - 62 ° C/W device on PCB, minimal footprint
ASA65R150E, ASM65R150E
3 Electrical characteristics
at Tj=25° C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 655 - - V VGS=0V, ID=250uA Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA Zero gate voltage drain current IDSS - - 1 uA VDS=650V, VGS=0V, Tj=25° C Gate-source leakage current IGSS - - 100 nA VGS=30V, VDS=0V Drain-source on-state resistance RDS(on) - 0.13 0.15 Ω VGS=10V, ID=10A, Tj=25° C Gate resistance (Intrinsic) RG - 10.9 - f=1MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 2389 - pF VGS=0V, VDS=50V, f=10kHz Output capacitance Coss - 218 - pF VGS=0V, VDS=50V, f=10kHz Reverse transfer capacitance Crss - 5.07 - pF VGS=0V, VDS=50V, f=10kHz Turn-on delay time td(on) - 12.4 - ns VDD=400V, VGS=13V, ID=11.3A,RG=1.7Ω; see table 9 Rise time tr - 21.6 - ns VDD=400V, VGS=13V, ID=11.3A,RG=1.7Ω; see table 9 Turn-off delay time td(off) - 50 - ns VDD=400V, VGS=13V, ID=11.3A,RG=1.7Ω; see table 9 Fall time tf - 18.4 - ns VDD=400V, VGS=13V, ID=11.3A,RG=1.7Ω; see table 9 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Qgs - 8.522 - nC VDD=400V, ID=11.3A, VGS=0 to 10V Gate to drain charge Qgd - 8.297 - nC VDD=400V, ID=11.3A, VGS=0 to 10V Gate charge total Qg - 47.59 - nC VDD=400V, ID=11.3A, VGS=0 to 10V Gate plateau voltage Vplateau - 5.4 - V VDD=400V, ID=11.3A, VGS=0 to 10V
ASA65R150E, ASM65R150E Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage VSD - 0.71 - V VGS=0V, IF=1A, Tj=25° C Reverse recovery time trr - 288 - ns VR=400V, IF=11.3 A, diF/dt=100A/µ s; see table 8 Reverse recovery charge Qrr - 4.3 - uC VR=400V, IF=11.3 A, diF/dt=100A/µ s; see table 8 Peak reverse recovery current Irrm - 26.2 - A VR=400V, IF=11.3 A, diF/dt=100A/µ s; see table 8
ASA65R150E, ASM65R150E
4 Electrical characteristics diagram
Diagram 1: Typ. output characteristics Diagram 2: Typ. Coss stored energy ID=f(VDS);Tj=25 ° C; parameter: VGS Eoss=f(VDS) Diagram 3: Typ. transfer characteristics Diagram 4: Typ. gate charge ID=f(VGS);parameter: Tj VGS=f(Qgate);ID=11.3A pulsed; parameter: VDD
ASA65R150E, ASM65R150E Diagram 5: Drain-source breakdown voltage Diagram 6: Typ. capacitances VBR(DSS)=f(Tj);ID=10mA C=f(VDS);VGS=0V; f=10 kHz Diagram 7: Safe operating area TC=25 ° C, TO220F ID=f(VDS); TC=25 ° C; VGS> 7V; D=0; parameter tp
ASA65R150E, ASM65R150E
5 Test Circuits
Table 8 Diode characteristics Table 9 Switching times Table10 Unclamped inductive load
ASA65R150E, ASM65R150E
6 Package Outlines
Figure1：Outline PG‐TO220F(HT)
ASA65R150E, ASM65R150E Figure2：OutlinePG-DFN8x8(XZ&JJW) min Nom max A 0.7 0.8 0.9 A1 0 - 0.05 b 0.9 1 1.1 D 7.9 8 8.1 D1 7.1 7.2 7.3 E 7.9 8 8.1 E1 4.65 4.75 4.85 E2 4.2 4.35 4.45 e L 0.4 0.5 0.6 K 2.65 - - 0.20REF 2.00BSC DIMENSION IN MMSymbol
ASA65R150E, ASM65R150E
Revision History
Revision Date Subjects (major changes since last revision) 1.0 2019-07-01 Preliminary version 1.1 2020-03-16 Update key Parameters 1.2 2020-04-05 Add Electrical characteristics Curve 1.3 2020-04-18 Add avalanche energy test condition, avalanche current data and test condition 1.4 2021-01-18 Add package for DFN8x8 1.5 2022-06-19 Updated TO220F POD to HT and DFN8X8 POD to XZ&JJW