AS394CH ALFA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- "Ideal" and identical transistors
- Common-mode rejection ratio
- Emitter-base offset voltage 150 мкВ
- Emitter-base offset voltage temperature drift 1 мкВ / оС
- Current gain (hFE) matched 0,96
- Parameters are guaranteed in the range of collector current of
- Noise Voltage Density of
- Ideal logarithmic properties > 120dB < 100µV 0,1µV/ оC < 2% 10µА tо 1mА 1,8 nV /Hz AS194H, AS394H, AS394CH AS194DE AS394DE, AS394CDE General Description The AS194 and AS394 are junction isolated ultra well -matched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift ver sus initial offset voltage, noise, and the exponential relation ship of base -emitter voltage to collector current closely ap proach those of a theoretical transistor. Extrinsic base and emitter resistances is very low, giving very low noise and operating over a wide current range. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current - the most common cause of field failures in matched d evices. The parasitic iso lation junction formed by the diodes also clamps the sub strate region to the most negative emitter to ensure com plete isolation between devices. The AS194H, AS394H, AS394CH are available in the 8-pin metal can TO5-8 package and the AS394DE and AS394CDE in the 8-lead plastic SOIC-8 (150mil) EPAD package. Connection Diagram Pin Information Top View Pins number Package type Symbol Description C2C1 B2B1 E2E1 NC B2B1 E2E1 1 8 4 5 NC TO5-8 SOIC-8/ EPAD 1 4 NC Not connected 2 1 C1 Collector1 3 2 B1 Base1 4 3 E1 Emitter1 5 5 NC Not connected AS194H, AS394H, AS394CH AS194DE AS394DE, AS394CDE 6 6 E2 Emitter2 7 7 B2 Base2 8 8 C2 Collector2 Metal Can Package (ТО5-8) SOIC-8 (150mil) / EPAD EPAD Isolated from Substrate Simplified schematics of AS194/394
AS “АLFA RPAR” Joint Stock Company ALFA Riga, Latvia www.alfarzpp.lv; alfa@alfarzpp.lv 2019 v.2 2 AS194 AS394 Absolute Maximum Ratings
- Collector Current
- Collector-Emitter Voltage AS194, AS394 AS394C
- Collector-Base Voltage AS194, AS394 AS394C
- Collector-Substrate Voltage AS194, AS394 AS394C
- Collector-Collector Voltage AS194, AS394 AS394C Base-Emitter Current 20mА 40V 20V 40V 20V 40V 20V 40V 20V 10mА Electrical performance characteristics Parameter, units Conditions AS194H AS194DE AS394H AS394DE AS394СH AS394CDE Min Typ Max Min Typ Max Min Typ Max Current Gain (hFE) UCB =0V до UMAX(Note1) IC=1 mА IC=100 µА IC=10 µА IC=1 µА 350 350 300 700 550 450 300 300 250 200 700 550 450 300 250 230 150 500 400 300 200 Current Gain Match, hFE 1,2 =100[IB] [hFE(MIN)] / IC , % UCB= 0 V to UMAX IC=10 µА tо IC=1 mА 0,5 2 0,5 4 1 5 Emitter-Base Offset Voltage, µV UCB = 0 V IC=10 µА tо IC=1 mА 25 100 150 200 Change in Emitter-Base Offset Voltage vs Collector-Base Voltage (CMRR), µV (Note1) IC=10 µА tо IC=1 mА UCB = 0 V to UMAX 10 25 10 50 10 100 Change in Emitter-Base Offset Voltage vs Collector Current, µV UCB = 0 V IC=10 µА tо 1 mА 5 25 5 50 5 50 Collector-Base Leakage, nA UCB = UMAX 0,05 0,3 0,05 0,5 0,05 0,5 Collector- Collector Leakage, nА UCC= UMAX 1 2 5 5 Input Voltage Noise, nV /Hz UCB=0 V, IC=100 µА f = 100 Hz - 100 kHz 1,8 1,8 1,8 Collector to Emitter Saturation Voltage, V IC=1 mА, IВ=10 µА IC=1 mА, IВ=100 µА 0,2 0,1 0,25 0,15 0,2 0,1 0,25 0,15 0,2 0,1 0,25 0,15 Note 1: Collector-base voltage is swept from 0 to UMAX=35V at a collector current of 10 µA, 100 µA and 1 mA.
AS “АLFA RPAR” Joint Stock Company ALFA Riga, Latvia www.alfarzpp.lv; alfa@alfarzpp.lv 2019 v.2 3 AS194 AS394 Package Dimensions in millimeters Botton view 8-lead T0-5 metal can package
AS “АLFA RPAR” Joint Stock Company ALFA Riga, Latvia www.alfarzpp.lv; alfa@alfarzpp.lv 2019 v.2 4 AS194 AS394 Package Dimensions in millimeters (Continued) SOIC-8 (150mil) EPAD
Revision history
24-Jan-2018 1 Initial version 04-Feb-2019 2 Simplified schematics