AS2333Q
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 12
Technical content
Features
Low Input Offset Voltage: 8μV (typ) Zero Drift: 0.02μV/°C (typ) 0.01Hz to 10Hz Noise: 1.1μVPP Low Quiescent Current: 12μA per Amplifier Supply Voltage: 1.8V to 5.5V Rail-to-Rail Input and Output Bandwidth 350kHz Slew Rate 0.12V/μs (typ) SO-8 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Pin Assignments
Applications
Battery-powered instruments Pumps Airbags Position sensors Vehicle occupant detection sensors Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. (Top View) SO-8 (Top View)
Document number: DS44879 Rev. 1 - 2 2 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q Typical Application Thermistor Measurement Low-Side Current Monitor Pin Descriptions Pin Number Pin Name I/O Description 3 +INA I Noninverting input, channel A 5 +INB I Noninverting input, channel B 2 -INA I Inverting input, channel A 6 -INB I Inverting input, channel B
1 OUTA O Output, channel A
7 OUTB O Output, channel B
8 V+ —
Recommend to place a min imum 0.1μF decoupling capacitor between V+ pin and GND as close as possible.
4 V- —
Single power supply application, it is normally tied to ground. Split power supply application, a min imum 0.1μF decouple capacitor will be recommended to place between V- pin and GND as close as possible. Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.) Symbol Parameter Rating Unit VS = V+ - V- Supply Voltage Range 6.5 V V-IN / V+IN Signal Input Terminals (Note 5) V- - 0.3V to V+ + 0.3V V Signal Input Terminals (Note 5) -1 to +1 mA Output Short-Circuit (Note 6) Continuous mA TSTG Storage Temperature -65 to +150 °C TJ Maximum Junction Temperature +150 °C TLEAD Lead Temperature (Soldering, 10 Seconds) +260 °C RθJA Junction-to-Ambient Thermal Resistance SO-8 139 °C/W RθJC Junction-to-Case Thermal Resistance SO-8 25 °C/W ESD HBM Human Body Model ESD Protection 4 kV ESD CDM Charged-Device Model ESD Protection 1 kV Notes: 4. Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. 5. Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails should be current limited to 10mA or less. 6. Short-circuit to ground.
Document number: DS44879 Rev. 1 - 2 3 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Rating Unit VS = V+ - V- Supply Voltage Range 1.8 to 5.5 V TA Operating Ambient Temperature Range -40 to +125 °C Electrical Characteristics (@TA = +25°C, VS = 5.0V, RL = 10kΩ connected to VS / 2, VCM = VS / 2, and V OUT = VS / 2, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit Offset Voltage VOS Input Offset Voltage VS = 5V — 8 22 μV ∆VOS/∆T Input Offset Voltage Drift (Note 7) TA = -40°C to +85°C — 0.02 0.1 μV/°C TA = -40°C to +125°C — — 0.2 μV/°C PSRR Power-Supply Rejection Ratio VS = 1.8V to 5.5V, TA = -40°C to +125°C — 1 10 μV/V — Long-Term Stability — (Note 7) μV — Channel Separation, DC — — 0.1 — μV/V Input Bias Current IB Input Bias Current TA = +25°C — ±70 ±200 pA TA = -40°C to +125°C — ±400 — IOS Input Offset Current — — ±140 ±400 Noise VN Input Voltage Noise f = 0.01Hz to 1Hz — 0.3 — μVPP f = 0.1Hz to 10Hz — 1.1 — IN Input Current Noise f = 10Hz — 100 — fA/√Hz Input Voltage VCM Common-Mode Voltage Range — (V-) - 0.1 — (V+) + 0.1 V CMRR Common-Mode Rejection Ratio (V-) - 0.1V < VCM < (V+) + 0.1V, TA = -40°C to +125°C 90 120 — dB Input Capacitance — Differential — — 2 — pF — Common-Mode — — 4 — pF Open-Loop Gain AOL Open-Loop Voltage Gain RL = 10kΩ, TA = -40°C to +125°C 102 130 — dB Frequency Response GBW Gain-Bandwidth Product CL = 100pF — 350 — kHz SR Slew Rate G = +1 — 0.12 — V/μs Output — Voltage Output Swing from Rail Positive Rail RL = 10kΩ TA = +25°C — 30 50 mV TA = -40°C to +125°C — — 70 Negative Rail RL = 10kΩ TA = +25°C — 10 50 TA = -40°C to +125°C — — 70 ISC Short-Circuit Current Source Current — 5 — mA Sink Current — 25 — mA — Open-Loop Output Impedance f = 350kHz, IO = 0A — 2 — kΩ Power Supply VS Specified Voltage Range — 1.8 — 5.5 V IQ Quiescent Current per Amplifier IO = 0A, TA = +25°C — 12 20 μA IO = 0A, TA = -40°C to +125°C — — 28 tON Turn-On Time VS = 5V — 100 — μs Note: 7. 300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1μV. This parameter guaranteed by design and characterization, not by testing.
Document number: DS44879 Rev. 1 - 2 4 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q Typical Performance Characteristics Supply Current vs. Temperature Input Offset Voltage vs. Input Common Mode Voltage -40 -25 -10 5 20 35 50 65 80 95 110 125 Dual OPAs VS = 1.8V VS = 5V VIN+ = VS / 2 No Load Supply Current (A) Ambient Temperature ( O -20 -10 Input Common Mode Voltage (V) V+ = 2.5V V- = -2.5V Input Offset Voltage (V) Output Characteristics-Sourcing Current Output Characteristics-Sinking Current Large Signal Response Small Signal Response VOUT 1V/div Unity Gain VS = 5.0V RL = 10kΩ Unity Gain VS = 5.0V RL = 10kΩ VIN 1V/div VIN 100mV/div VOUT 100mV/div Time 10μs/div Time 10μs/div 0.01 0.1 1 100 1000 10000 Output Source Current (mA) V+ = 5.0V, V- = 0 TA = +25 O C Output to VCC Reference Voltage - VCC - VOUT (mV) 0.1 1 10 0.01 0.1 Output Sink Current (mA) V+ = 5.0V, V- = 0 TA = +25 O C Output Low Voltage (V)
Document number: DS44879 Rev. 1 - 2 5 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q Typical Performance Characteristics (continued) Small Signal Response Small Signal Response Negative Overvoltage Response Positive Overvoltage Response Output Voltage Swing from Rail Voltage Noise Spectral Density -40 -25 -10 5 20 35 50 65 80 95 110 125 Positive Negative Ambient Temperature ( O VS = 5.0V RL = 10k to VS / 2 Output Voltage Swing from Rail (mV) Unity Gain VS = 5.0V RL = 10kΩ CL = 220pF Unity Gain VS = 5.0V RL = 10kΩ CL = 100pF Av = -10 VOUT 100mV/div VIN 100mV/div Time 10μs/div Time 10μs/div Time 50μs/div Time 50μs/div VIN 100mV/div VOUT 100mV/div VOUT 500mV/div VOUT 500mV/div VIN 1V/div VIN 1V/div 100 1k 10k 100 1000 Frequency (Hz) Voltage Noise Spectral Density (nV/ Hz)
Document number: DS44879 Rev. 1 - 2 6 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q Typical Performance Characteristics (continued) Frequency Response Power Supply Rejection Ration vs. Frequency 1k 10k 100k 1M -20 100 -100 -80 -60 -40 -20 100 120 140 160 PM RL = 10k CL = 100pF Gain (dB) Gain Frequency (Hz) Phase Margin ( O 10 100 1k 10k 100k 1M 100 120 V+ = 5.0V V- = 0 Ripple = 500mV PSRR (dB) Frequency (Hz) 0.1Hz to 10Hz Noise 1s / div 0.5uV / div
Document number: DS44879 Rev. 1 - 2 7 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q
Application Information
The AS2333Q is a low-power, zero-drift, high-precision, rail-to-rail input and output operational amplifier, which adopts chopper-stabilized function circuits to provide the advantage of minimizing input offset voltage and offset voltage drift over time and temperature . Its input common-mode voltage range extends 0.1 V beyond the supply rails to allow for sensing near ground or system VDD. The device operates from a single -supply voltage as low as 1.8V, is unity-gain stable, has no 1/f noise, and has good PSRR and CMRR performance. These features make the part suitable for a wide range of general-purpose applications, especially for low-power high-precision applications. Low Input Referred Noise The chopper-stabilized technique greatly reduces flicker noise. The zero-drift chopper-stabilized amplifiers are especially suited for accurate, high- gain amplification at lower frequencies. In general, they do not exhibit the higher bandwidth of linear operational amplifiers, and the location of their clock frequency establishes a practical frequency limit on signal fidelity. This makes performance at low frequencies especially important, and the chopper-stabilized architecture further contributes to low-frequency usefulness by eliminating the classic linear operational amplifier 1/f input voltage noise. Many high-gain sensor applications are at low frequencies, making zero-drift amplifiers a natural choice for this function. Below plots compared conventional amplifier voltage noise density behavior and zero -drift amplifier ’s, this 1/f noise elimination in zero -drift amplifier allows the AS2333Q to have much lower noise at DC and low frequency compared to conventional low-noise amplifiers. 100 1k 10k 10n 100n VCC = 5.0V, VEE = 0V, AV = 1 Input Voltage Noise (V/ Hz) Frequency (Hz) 100 1k 10k 100 1000 Frequency (Hz) Voltage Noise Spectral Density (nV/ Hz) Figure 1. Input Voltage Noise in Conventional Amplifier Figure 2. Input Voltage Noise in Zero-Drift Amplifier (AS2333Q) loading. Capacitive loading directly on the output terminal can decrease the device’s phase margin leading to high frequency ringing or oscillation. waveforms with and without RNULL 330Ω for load conditions CL = 470pF and RL = 10kΩ.
Document number: DS44879 Rev. 1 - 2 10 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q
Ordering Information
Part Number Identification Code Package Tape and Reel Quantity Part Number Suffix AS2333QS-13 AS2333Q SO-8 2500/Tape & Reel -13 Note: 8. This part will be developed in future. Marking Information SO-8 AS2333Q (Top View) YY WW X X WW : Week : 01~52; 52 YY : Year : 19, 20, 21~ X X : Internal Code 8 7 6 5 1 2 3 4 represents 52 and 53 week
Document number: DS44879 Rev. 1 - 2 11 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e -- -- 1.27 h - -- 0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Mechanical Data Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.075 grams (Approximate) b e E A 9° (All sides) 4°±3° c Q h 45° R 0.1 D L Seating Plane Gauge Plane C X Y
Document number: DS44879 Rev. 1 - 2 12 of 12 www.diodes.com May 2022 © Diodes Incorporated AS2333Q IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engin eering customers and users who design with Diodes’ products. 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