AS1004 ASTEC | Alldatasheet

Document overview

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Technical content

Features

  • Low voltage reference
  • 10 µA turn-on current for AS1004-1.2
  • 20 µA turn-on current for AS1004-2.5
  • ± 4 mV (0.3 %) initial accuracy for AS1004-1.2
  • ± 20 mV (0.8 %) initial accuracy for AS1004-2.5
  • Guaranteed operation to 20 mA. Over three orders of magnitude of operating current!
  • Temperature performance guaranteed
  • Very low dynamic impedance

Ordering Information

Description Temperature Range Order Codes TO-92 0 to 70 ° C AS1004-1.2LP AS1004-2.5LP 8-Pin Plastic SOIC 0 to 70 ° C AS1004-1.2D AS1004-2.5D SOT-89 0 to 70 ° C AS1004-1.2S AS1004-2.5S © ASTEC Semiconductor Pin Configuration — Top view ANODE CATHODE N/C 81N/C CATHODE 72N/C N/C 63N/C CATHODE 54ANODE ANODE N/C ANODE CATHODE TO-92 (LP) SOIC (D) SOT-89 (S)

AS1004 Micropower Voltage Reference ASTEC Semiconductor Simplified Schematic Recommended Conditions Parameter Symbol Rating Unit Cathode Current I Z 100 µA Typical Thermal Resistances Package θJA θJC Typical Derating TO-92 160 ° C/W 80 ° C/W 6.3 mW/ °C 8L SOIC 175 ° C/W 45 ° C/W 5.7 mW/ °C SOT-89 110 ° C/W 8 ° C/W 9.1 mW/ °C Absolute Maximum Ratings Parameter Symbol Rating Units Reverse Breakdown Current I Z 30 mA Forward Current I F 30 mA Continuous Power Dissipation at 25° CP D TO-92 775 mW 8LSOIC 750 mW SOT-89 1000 mW Maximum Junction Temp T J 150 °C Storage Temperature T STG –65 to 150 °C Lead Temperature, Soldering 10 Seconds T L 300 °C R6 R7 Q12 R11 R10 R12 A K Q14 Q4 Q3Q13 Q11 Q10 Q9 Q8 Q5 Q1

Micropower Voltage Reference AS1004 ASTEC Semiconductor

Electrical Characteristics

Electrical Characteristics are guaranteed over full junction temperature range (0 to 70° C). Ambient temperature must be derated based on power dissipation and package thermal characteristics. AS1004-1.2 AS1004-2.5 Parameter Symbol Test Condition Min Typ Max Min Typ Max Unit Average Temperature ΔVZ /ΔTI min ≤ IZ ≤ 20 mA 20 60 ppm/ °C Coefficient Minimum Operating Current IZ (min) 41 0 1 2 2 0 µA Reverse Breakdown Voltage ΔVZ /ΔIZ Imin ≤ IZ ≤ 1 mA 0.5 1 0.5 1 mV Change With Current Over Temperature 0.5 1.5 0.5 1.5 mV 1 mA ≤ IZ ≤ 20 mA 6.5 10 6.5 10 mV Over Temperature 6.5 20 6.5 20 mV Reverse Dynamic Impedance ZZ IZ = 100 mA, f = 25 Hz 0.2 0.6 0.8 0.9 Ω Over Temperature 1 1.5 1.5 Ω Wide Band Noise e n IZ = 100 µA

10 Hz ≤ f ≤ 10 KHz 60 60 µV

Long Term Stability ΔVZ /ΔTI Z = 100 µA TA = 25° C ± 0.1° C 20 60 ppm/kH AS1004-1.2 Reference Voltage vs. Ambient Temperature Figure 1 Figure 2 Typical Performance Curves ppm mV 5000 0.5 ΔVREF ΔT -10 10 20 30 40 50 60 70 Temperature (°C) 0.025 mV/°C 0.002 %/°C 20 ppm/°C Average Temperature Coefficient =ΔVREF ΔT Calculating Average Temperature Coefficient for the AS1004-1.2 Reference TA – Ambient Temperature (°C) VZ – Reference Voltage (V) 1.225 1.230 1.235 1.240 1.245 –55 –15 25 85 125 –35 5 45 65 105 IZ = 100 mA

Micropower Voltage Reference AS1004 ASTEC Semiconductor Typical Applications 2.5V Reference VIN 3 k OUT AS1004-1.2 VIN 100 k OUT AS1004-2.5 VIN 100 k OUT AS1004-2.5 22 Ω 50 µF Low Noise Reference1.235V Reference Figure 20 Figure 21 Figure 15 Figure 16 Figure 17 High Stability 5V Regulator VIN OUT AS1004-2.5 200 Ω 10 µF 0.1 µF + 5 k V - LM317 VIN VOUT ADJ R ≤ V -– 1V 0.015 mA Variable Output Regulator Figure 18 Figure 19 Lead Acid Low Battery Detector +12 V 86.7 k 500 k 150 pF AS1004-1.2 500 k LO = Battery Low Micropower 10V Reference VIN ≥ 8 V

5 V OUT

AS1004-2.5 976 Ω , 1% 22 µF LM338 VIN VOUT ADJ 324 Ω , 1% 22 M 1 M 150 pF AS1004-1.2 3.5 M 500 k LM4250 VIN = 12 V to 20 V

AS1004 Micropower Voltage Reference ASTEC Semiconductor Notes