NVD EDI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
H.V. RECTIFIER DIODES & ARRAYS Diode Specifications @ o 23 C (Absolute Maximum Unless Otherwise Specified) NVDX Diode (Standard Recovery) NVD Diode And Diode Arrays (Fast Recovery) PRV 1,000 Vdc 1,200 Vdc IF 5.0mA 5.0mA V @ 1 mA dcF 6.0 V 4.0 V Junction Capacitance 0.35pF . @500 Vdc I @ 1,000 Vdc @ 23 CR 0.5 nanoamperes R 5.0 nanoamperes I @ 500 VdcR 1.0 nanoamperes typical 5.0 nanoamperes max. R 25 nanoamperes R 0.1 nanoamperes typical 0.25 nanoamperes max. R 1.0 nanoamperes typical 2.0 nanoamperes max. T (Reverse Recovery Time),Fig.4rr 50 ns typical 100 ns max. o o -55 C to +100 C o o -63 C to +125 C o o -55 C to +100 C o o -63 C to +125 C O O O O O EDI reserves the right to change these specifications at any time without notice. These diodes and arrays have been specifically designed for use in night vision and image intensifier equipment power supplies. They offer unusual characteristics that have not been previously available. As a result of a proprietary EDI diffusion process, they feature small size and a unique combination of extremely low leakage and ultra fast recovery time. I @ 1,000 Vdc @ 55 C I @ 500 Vdc @ 55 C I @ 250 Vdc @ 23 C I @ 250 Vdc @ 55 C Temperature Range: Operating Temperature Range: Storage