ARF521 MICROSEMI | Alldatasheet

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Technical content

165V, 150W, 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifi ers up to 150MHz.

  • Specifi ed 125 Volt, 81MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (Class AB) Ef fi ciency = 50%
  • High Voltage Breakdown and Large SOA for Superior Ruggedness.
  • Industry Standard Package
  • Low Vth Thermal Coeffi cient Symbol Parameter ARF521 Unit VDSS Drain-Source Voltage 500 V ID Continuous Drain Current @ TC = 25°C 10 A VGS Gate-Source Voltage ±30 V PD Total Device Dissipation @ TC = 25°C 250 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to 175 °CTL Lead Temperature: 0.063” from Case for 10 Sec. 300 Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500 V VDS(ON) Drain-Source On-State Resistance 1 (ID(ON) = 5A, VGS = 10V) 0.56 0.8 Ω IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 15V, ID = 5A) 3 3.6 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 200mA) 2 4 Volts Microsemi Website - http://www.microsemi.com 050-4930 Rev B 8-2007 Thermal Characteristics Symbol Characteristic Min Typ Max Unit RθJC Junction to Case Thermal Resistance 0.60 °C/W RθCS Case to Sink (Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved. ARF521 Test Fixture 2-22-02 rf Gate Bias Vdd Power C1 C3 C4 C5 C13 DUT C12 C9 C10 C11 +125V RF Output RF Input C1 - Arco 406 Mica trimmer C2 - 220pF Semco metal clad C3 - Arco 464 Mica trimmer C4 - 820pF ATC 700B C5- 1000pF ATC 700B C6 - Arco 463 Mica trimmer C7-C10 10nF 500V chip C11-C13 1nF NPO 500V TL1 - .23" x 1.5" stripline L2 -- 3t #16 AWG .31" ID .3"L ~65nH L3 -- 10t #22 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R3 -- 1k Ohm 1/4W Carbon DUT = ARF521 Bias 0 - 12V TL1 ARF521 Test Circuit 81.36 MHz A U M MQ R B D K E Seating Plane C J H PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN .5” SOE DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.096 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 11.0 M 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54