ARF521 ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.

  • Specified 125 Volt, 81MHz Characteristics:
  • Output Power = 150 Watts.
  • Gain = 13dB (Class AB)
  • Efficiency = 50%
  • High Voltage Breakdown and Large SOA for Superior Ruggedness.
  • Industry standard package
  • Low Vth thermal coefficient ARF521 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com G D S APT STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS gfs Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 (ID(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) MIN TYP MAX 500 0.56 8 250 ±100 3 3.6 UNIT Volts Ohms µA nA mhos Volts Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF521 500 ±30 250 -55 to 175 300 UNIT Volts Amps Volts Watts VGS(TH) THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.60 0.1 UNIT °C/W

.5" SOE Package Outine 2. CONTROLLING DIMENSION: INCH. A U M MQ R B D K E Seating Plane C J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 11.0 M 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN ARF521 C1 C3 C4 C5 C13 DUT C12 C9 C10 C11 +125V RF Output RF Input C1 - Arco 406 Mica trimmer C2 - 220pF Semco metal clad C3 - Arco 464 Mica trimmer C4 - 820pF ATC 700B C5- 1000pF ATC 700B C6 - Arco 463 Mica trimmer C7-C10 10nF 500V chip C11-C13 1nF NPO 500V TL1 - .23" x 1.5" stripline L2 -- 3t #16 AWG .31" ID .3"L ~65nH L3 -- 10t #22 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R3 -- 1k Ohm 1/4W Carbon DUT = ARF521 Bias 0 - 12V TL1 ARF521 Test Circuit 81.36 MHz Hazardous Material Warning The ceramic portion of the device between the leads and the mounting flange is beryllium oxide, BeO. BeO dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices should never be thrown away with general industrial or domestic waste. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.