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Technical content
Features
- Specified 500 V, 128 MHz characteristics: – Output power = 900 W peak – Gain = 15 dB (Class AB) – Efficiency = 50% minimum
- High-performance push-pull RF package
- High-voltage breakdown and large SOA for superior ruggedness
- Low thermal resistance
- RoHS compliant © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 1
- Device Specifications This section shows the specifications of the ARF476FL device.
1.1 Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the ARF476FL device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain-source voltage 500 V VDGO Drain-gate voltage 500 ID Continuous drain current 10 A VGS Gate-source voltage ±30 V PD Total power dissipation (per side) 910 W TJ, TSTG Operating and storage junction temperature range –55 to 175 °C TL Lead temperature: 0.063" from case for 10 seconds 300
1.2 Electrical Performance
The following table shows the static characteristics of the ARF476FL device. TC = 25 °C unless otherwise specified. Table 1-2. Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 500 V VDS(ON) On-state drain voltage1 ID(ON) = 5 A, VGS = 10 V 2.9 4 IDSS Zero-gate voltage drain current VDS = VDSS, VGS = 0 V 100 µA VDS = 50 V, VGS = 0 V, TC = 125 °C 500 IGSS Gate-source leakage current VGS = ±30 V, VDS = 0 V ±100 nA gfs Forward transconductance VDS = 15 V, ID = 5 A 4.2 5.1 S gfs1/gfs2 Forward transconductance match ratio VDS = 15 V, ID = 5 A 0.9 1.1 S VGS(th) Gate-source threshold voltage VDS = VGS, ID = 200 mA 2 3.3 4 V DVGS(th) Gate threshold voltage match VDS = VGS, ID = 200 mA 0.2 V Note: 1. Pulse test: Pulse width < 380 μs, Duty Cycle < 2%. The following table shows the thermal characteristics of the ARF476FL device. ARF476FL Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 2
Table 1-3. Thermal Characteristics (per side) Symbol Characteristic Min Typ Max Unit RθJC Junction-to-case thermal resistance 0.15 0.165 °C/W RθJHS Junction-to-sink thermal resistance (Use high-efficiency thermal grease and planar heat sink surface.) 0.30 0.33 The following table shows the dynamic characteristics of the ARF476FL device. TC = 25 °C unless otherwise specified. Table 1-4. Dynamic Characteristics (per Section) Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input capacitance VGS = 0 V, VDS = 50 V, f = 1 MHz 740 830 pF Coss Output capacitance 125 130 Crss Reverse transfer capacitance 7 9 td(on) Turn-on delay time VGS = 15 V, VDD = 250 V, ID = ID[Cont.] at 25 °C, Rg = 1.6 Ω 5.1 10 ns tr Rise time 4.1 8 td(off) Turn-off delay time 12 18 tf Fall time 4.0 7 The following table shows the functional characteristics of the ARF476FL device. TC = 25 °C unless otherwise specified. Table 1-5. Functional Characteristics (Push-Pull Configuration) Parameter Characteristic Test Conditions Min Typ Max Unit GPS Common source amplifier power gain f = 128 MHz, VDD = 150 V, IDQ = 15 mA, Pout = 900 W, PW = 3 ms, 10% duty cycle 14 16 dB η Drain efficiency 50 55 % Ψ Electrical ruggedness VSWR 5:1 No degradation in output power ARF476FL Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 3
1.3 Typical Performance Curves
This section shows the typical performance curves of the ARF476FL device per transistor section unless otherwise specified. Figure 1-1. Output Characteristics Figure 1-2. Capacitance vs. Drain-to-Source Voltage Figure 1-3. Transfer Characteristics Figure 1-4. Threshold Voltage vs. Temperature ARF476FL Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 4
Table 1-6. Typical Class AB Large Signal Input–Output Impedance Frequency (MHz) Zin Ω Gate-to-Gate Zout Ω Drain-to-Drain 30 5.2 – j 10 41 – j 20 60 1.37 – j 5.2 26 – j 25 90 0.53 – j 2.6 16 – j 23 120 0.25 – j 1.0 10 – j 20 150 0.25 + j 0.2 6.7 – j 17 Notes:
- Z in — Gate shunted with 25 Ω
- I DQ = 15 mA each side
- Z out — Conjugate of optimum load for 600 W peak output at VDD = 150 V, 25% duty cycle and PW = 5 ms ARF476FL Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 6
- Package Specification This section shows the package specification of the ARF476FL device.
3.1 Package Outline Drawing
The following figure illustrates the package outline of the ARF476FL device. Figure 3-1. T3C Package Outline Note: Hazardous Material Warning! The white ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be take during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Note: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. ARF476FL Package Specification © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 8
Thermal Considerations and Package Mounting The rated power dissipation is only available when the package mounting surface is at 25 °C and the junction temperature is 175 °C. The thermal resistance between junctions and case mounting surface is 0.16 °C/W. When installed, an additional thermal impedance of 0.15 °C/W between the package base and the mounting surface is typical. Ensure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heat sink should incorporate a copper heat spreader to obtain best results. The package design clamps the ceramic base to the heat sink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. T = 3-4 in-lb (0.34 - 0.45 N-m). ARF476FL Package Specification © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 9
- Revision History Table 4-1. Revision History Revision Date Description A 12/2021 • Document migrated from Microsemi template to Microchip template; Assigned Microchip literature number DS-00004436A,which replaces the previous Microsemi literature number 050-4931.
- Changed g fs minimum value from 3 to 4.2 and typical from 3.6 to 5.1 (changed unit from MHOS to S). Initial releases (Microsemi Revisions A through E) 02/2006 – 12/2010 Previous releases. ARF476FL
Revision History
© 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004436A-page 10
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