ARF475FL ADPOW | Alldatasheet

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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS (each device) Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 / gfs2 VGS(TH) ∆VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 (ID(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 5A) Forward Transconductance Match Ratio (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) MIN TYP MAX 500 2.9 4 250 ±100 3 3.6 0.9 1.1 2 3.3 4 0.2 UNIT Volts µA nA mhos Volts Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C (each device) Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF475FL 500 500 ±30 483 -55 to 175 300 UNIT Volts Amps Volts Watts RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 165V 300W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

  • Specified 150 Volt, 128 MHz Characteristics:
  • Output Power = 900 Watts Peak
  • Gain = 15dB (Class AB)
  • Efficiency = 50% min
  • High Performance Push-Pull RF Package.
  • High Voltage Breakdown and Large SOA for Superior Ruggedness.
  • Low Thermal Resistance. ARF475FL Common Source Push-Pull Pair CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.31 0.1 UNIT °C/W G G D S S S S D

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved. 128MHz Test amplifier Po = 900W @150V 3ms pulse 10% Duty Cycle Notes: The value of L1 must be adjusted as the supply voltage is changed to maintain resonance in the output circuit. At 128MHz its value changes from approximately 40nH at 100V to 30nH at 150V. With the 50Ω drain-to-drain load, the duty cycle above 100V must be reduced to insure power dissipation is within the limits of the device. Maximum pulse length should be 100mS or less. See transient thermal impedance, figure 5. Peak Output Power vs. Vdd and Duty Cycle 100 200 300 400 500 600 700 800 900 80 100 120 140 160 0.2 0.4 0.6 0.8 1.2 Drain Supply Voltage Vdd Duty Cycle Po Watts Max Vdd DUT TL3 TL4 TL5 TL6 C5 C11 TL1 TL2 Vg1 Vg2 R4R2 C1 25pF poly trimmer C2 750pF ATC 700B C3-4 2200pF NPO 500V chip C5-10 10nF 500V chip C11 1000uF 250V electroytic L1 30nH 1.5t #18 enam .375" dia L2 680nH 12t #24 enam .312" dia L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2uH R1-2 3.1Ω : 3 parallel 22Ω 1W 2512 SMT R3-4 2.2kΩ 1/4W axial T1 1:1 balun 50Ω coax on Fair-Rite 2843000102 core T2 4:1 25Ω coax on 2843000102 Fair-Rite balun core T3 1:1 coax balun RG-303 on 2861006802 Fair-Rite core TL1-2 Printed line L= 0.75" w =.23" TL3-6 Printed line L= 0.65" w =.23" 0.23" wide stripline on FR-4 board is ~ 30Ω Zo C10 HAZARDOUS MATERIAL WARNING The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. ARF475 .225 .225 .150 .150 .050.050 .100 .325 .570 .320 .125dia 4 pls .125R 4 pls SS SS G1 G2 1.500 .300 .200 .005 .040 1.250 Thermal Considerations and Package Mounting: The rated power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resistance between junctions and case mounting sur- face is 0.3°C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Ther- mal joint compound must be used to reduce the effects of small sur- face irregularities. Use the minimum amount necessary to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results. The package design clamps the ceramic base to the heatsink. A clamped joint maintains the required mounting pressure while al- lowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. T = 6 in-lb (0.68N-m).