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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1/ gfs2 VGS(TH) ∆VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 (ID(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5A) Forward Transconductance Match Ratio (VDS = 25V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) MIN TYP MAX 500 250 ±100 0.9 1.1 0.1 UNIT Volts µA nA mhos Volts Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C (each device) Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF473 500 ±30 500 -55 to 200 300 UNIT Volts Amps Volts Watts RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

  • Specified 135 Volt, 130 MHz Characteristics:
  • Output Power = 300 Watts.
  • Gain = 13dB (Class AB)
  • Efficiency = 50%
  • High Performance Push-Pull RF Package.
  • High Voltage Breakdown and Large SOA for Superior Ruggedness.
  • Low Thermal Resistance. ARF473 Common Source Push-Pull Pair CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com THERMAL CHARACTERISTICS Symbol RθJC RθCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.35 0.1 UNIT °C/W ARF473 G G D S (Flange) D

Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration ZθJC, THERMAL IMPEDANCE (°C/W) 0.4 0.1 0.05 0.01 0.005 0.001 0.1 0.02 0.05 0.2 D=0.5

0.01 SINGLE PULSE

TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 5.5V 4.5V VGS=15 & 10V Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance Freq. (MHz) 27.12 40.68 63.8 81.36 127.4 4.78 - j 14.3 1.96 - j 9 0.59 - j 4.1 0.31 - j 1.65 0.4 + j 2.66 49 - j 38.8 33.6 - j 39.5 18 - j 33.5 12.3 - j 29 5.5 - j 20.3 Zin - Gate shunted with 100Ω I DQ = 75 mA each side ZOL - Conjugate of optimum load for 300 Watts output at Vdd = 125V Input and output impedances are measured from gate to gate and drain to drain respectively ZOL (Ω)Zin (Ω)

.435 .225 0.200 0.400 0.390 1.100 1.340 .005 .210 .107 .060 .065 rad 2 PL Package Dimensions (inches) Pin 1. Drain 2. Drain 3. Gate 4. Gate 5. Source ARF473 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. J1 T1 130V DUT TL3 TL4 TL5 TL6 L2C1 C2 C5 C10 TL1 TL2 C1 10-80 pF trimmer ARCO 462 C2-4 1000 pF NPO 500V chip C5-C9 10 nF 500V chip C10 .47 uF Ceramic 500V L1 680 nH 12t #24 enam .312" dia L2 55 nH 3t #18 enam .25" dia L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2 uH R1-2 100 Ω 0.5 W T1 4:1 RF transformer on two beads same as L3. T2 1:1 coax balun. Fair-Rite 2643665902 bead on 1.5" RG-303 50 Ω teflon coax. TL1-2 Printed line L=1.2" w=.23" TL3-4 Printed line L=.25" w=.23" TL5-6 Printed line L=0.25" w=.23" 0.23" wide stripline on FR-4 board is ~32Ω Zo

81.36 MHz Test amplifier Po = 500W @130 V

Peak Output Power vs... Vdd 100 200 300 400 500 600 700 800 900 80 100 120 140 160 0.2 0.4 0.6 0.8 1.2 Drain Supply Voltage Vdd Duty Cycle Po Watts Notes: The value of L2 must be adjusted as the supply voltage is changed to maintain resonance in the output circuit. At 81 MHz its value changes from approximately 50 nH at 100V to 70 nH at 165V. The duty cycle past 100V must be reduced to insure power dissipation is within the limits of the device. Maximum pulse length should be 100mS or less. See figure 7. Max Vg1 Vg2 APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.