ARF469AG

ARF469AG MICROCHIP | Alldatasheet

Document overview

• Manufacturer or author: Microchip Technology Inc
• PDF pages: 8

Technical content

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 350W 45MHz The ARF469A and ARF469B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation.

• Specified 150 Volt, 40.68 MHz Characteristics:
• Output Power = 350 Watts.
• Gain = 16dB (Class AB)
• Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 (VGS = 10V, ID = 15A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) MIN TYP MAX 500 0.25 0.28 250 ±100 2 4 UNIT Volts ohms µA nA mhos Volts Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Ratings 500 500 ±30 445 0.28 -55 to 150 300 UNIT Volts Amps Volts Watts °C/W ARF469AG ARF469BG TO-264 Com mon Source CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-4983 Rev C 6-2023

1,000 10,000 0 100 200 300 400 500 DYNAMIC CHARACTERISTICS ARF469AG_BG FUNCTIONAL CHARACTERISTICS Symbol GPS η Ψ Test Conditions f = 40.68 MHz VGS = 2.5V VDD = 150V Pout = 350W No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 MIN TYP MAX 14 16 70 75 UNIT dB

1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%

CAPACITANCE (pf) VD S, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage Ciss Coss Crss Symbol Characteristic Test Conditions MIN TYP MAX UNIT Ciss Input Capacitance VGS = 0V VDS = 150V f = 1 MHz 2300 Coss Output Capacitance 250 pF Crss Reverse Transfer Capacitance 125 TYPICAL PERFORMANCE CURVES -50 0 50 100 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) VD S> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°C TJ = +125°C TJ = +25°C 1 10 100 1000 0.1 100 1000 VDS , Drain-to-Source Voltage (V) ID, Drain Current (A) 100us 10ms 10us 1ms 100ms Tc = 25C F igure 3, Typical Maximum Safe Operating Area 050-4983 Rev C 6-2023

ARF469AG_BG TO-264 (L) Package Outline 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Dimensions in Millimeters and (Inches) Drain 29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ARF - A Device ARF - B Gate Drain Source Source Drain Gate NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. DUT C6 R3 150V RF Output RF Input Typical 40.68 MHz Test Circuit Bias 0-12V TL1 C1 -- 2200pF ATC 700B C2-C5 -- Arco 465 Mica trimmer C6-C8 -- .1 µF 500V ceramic chip C9 -- 3x 2200 pF 500V chips COG L1 -- 4t #22 AWG .25"ID .25 "L ~87nH L2 -- 5t #16 AWG .312" ID .35"L ~176nH L3 -- 10t #24 AWG .25"ID ~.5µH L4 -- VK200-4B ferrite choke 3µH R1- R3 -- 1kΩ 0.5Ω Carbon TL1 -- 34Ω t-line 0.175” x 1” C1 .45" from gate pin. PCB -- 0.062” FR4, Er=4.7 050-4983 Rev C 6-2023

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