ARF466FL_10 MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

N- CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scienti fi c, commercial, medical and industrial RF power ampli fi er applications up to 45 MHz. It has been optimized for both linear and high ef fi ciency classes of operation.

  • Specifi ed 150 Volt, 40.68 MHz Characteristics:
  • Output Power = 300 Watts.
  • Gain = 16dB (Class AB)
  • Effi ciency = 75% (Class C)
  • Low Cost Flangeless RF Package.
  • Low Vth thermal coeffi cient.
  • Low Thermal Resistance.
  • Optimized SOA for Superior Ruggedness. ARF466FL 050-4928 Rev D 5-2010 ARF466FL Microsemi Website - http://www.microsemi.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Symbol Parameter Min Typ Max Unit RθJC Junction to Case 0.13 °C/WRθJHS Junction to Sink (High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.27 Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed Symbol Parameter Ratings Unit VDSS Drain-Source Voltage 1000 VVDGO Drain-Gate Voltage 1000 ID Continuous Drain Current @ TC = 25°C 13 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 1153 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to 175 °CTL Lead Temperature: 0.063” from Case for 10 Sec. 300 Static Electrical Characteristics Symbol Parameter Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 1000 V RDS(ON) Drain-Source On-State Resistance 1 (VGS = 10V, ID = 6.5A) 1.0 ohms IDSS Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 25V, ID = 6.5A) 3.3 7 9 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 4 Volts Thermal Characteristics G D S

DYNAMIC CHARACTERISTICS ARF466FL 30 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Class C VDD = 150V Pout = 150W GAIN (dB) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 500 V ID = 13A @ 25°C RG = 1.6W MIN TYP MAX 2000 165 UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS h y Test Conditions f = 40.68 MHz VGS = 2.5V VDD = 150V Pout = 300W No Degradation in Output Power Characteristic Common Source Amplifi er Power Gain Drain Effi ciency Electrical Ruggedness VSWR 10:1 MIN TYP MAX 14 16 70 75 UNIT dB

1 Pulse Test: Pulse width < 380μS, Duty Cycle < 2%

Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 1 10 100 1000 0 1 2 3 4 5 6 7 8 CAPACITANCE (pf) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 10,000 1000 500 100 .1 1 10 100 200 ID, DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°C TJ = +125°C TJ = +25°C TC =+25°C TJ =+175°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) Ciss Coss Crss 1mS 10mS 100mS 100uS 050-4928 Rev D 5-2010

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. .330 .210.210 .325 +/- .01 .570ARF466FL 1.500 .100 .100 .300 .200 .005 .040 .320 1.250 .125R 4 pls .125dia 4 pls DS S SS G ARF466FL C6 R2 150V RF Output RF Input

40.68 MHz Test Circuit

C2-C5 -- Arco 465 Mica trimmer C6-C8 -- .1 mF 500V ceramic chip C9 -- 3x 2200 pF 500V chips COG L1 -- 3t #22 AWG .25"ID .25 "L ~55nH L2 -- 5t #16 AWG .312" ID .35"L ~176nH L3 -- 10t #24 AWG .25"ID ~.5uH L4 -- VK200-4B ferrite choke 3uH R1- R3 -- 1k 7 0.5W R4- R5 -- 17 1W SMT TL1 -- 40 7 t-line 0.15 x 2" C1 is ~1.75" from R4-5. Thermal Considerations and Package Mounting: The rated power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C. The thermal resistance between junctions and case mounting surface is 0.13 °C/W. When installed, an additional thermal impedance of 0.17°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results. The package design clamps the ceramic base to the heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. Torque the mounting screws to 6 in-lb (0.68 N-m). HAZARDOUS MATERIAL WARNING The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.