ARF466A ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation.

  • Specified 150 Volt, 40.68 MHz Characteristics:
  • Output Power = 300 Watts.
  • Gain = 16dB (Class AB)
  • Efficiency = 75% (Class C)
  • Low Cost Common Source RF Package.
  • Low Vth thermal coefficient.
  • Low Thermal Resistance.
  • Optimized SOA for Superior Ruggedness. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 (VGS = 10V, ID = 6.5A) Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) MIN TYP MAX 1000 0.90 250 ±100 3.3 7 9 UNIT Volts ohms µA nA mhos Volts Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ T C = 25°C Gate-Source Voltage Total Power Dissipation @ T C = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF466A_B 1000 1000 ±30 357 0.35 -55 to 150 300 UNIT Volts Amps Volts Watts °C/W ARF466A ARF466BTO-264 Common Source 050-4925 Rev C 8-2005 G D S

DYNAMIC CHARACTERISTICS ARF466A_B 30 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Class C VDD = 150V Pout = 150W GAIN (dB) Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 500 V ID = 13A @ 25°C RG = 1.6Ω MIN TYP MAX 2000 165 UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Test Conditions f = 40.68 MHz VGS = 2.5V VDD = 150V Pout = 300W No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 MIN TYP MAX 14 16 70 75 UNIT dB

1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. 1 10 100 1000 0 12345678 CAPACITANCE (pf) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 10,000 1000 500 100 .1 1 10 100 200 ID, DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x R DS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°C TJ = +125°C TJ = +25°C TC =+25°C TJ =+150°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) Ciss Coss Crss 1mS 10mS 100mS 100uS 050-4925 Rev C 8-2005

ARF466A_B 050-4925 Rev C 8-2005 APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. TO-264 (L) Package Outline 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Dimensions in Millimeters and (Inches) Drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ARF - A Device ARF - B Gate Drain Source Source Drain Gate Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. R2 R3 DUT 150V RF Output RF Input

40.68 MHz Test Circuit

C2-C5 -- Arco 465 Mica trimmer C6-C8 -- .1µF 500V ceramic chip C9 -- 3x 2200 pF 500V chips COG L1 -- 4t #22 AWG .25"ID .25 "L ~87nH L2 -- 5t #16 AWG .312" ID .35"L ~176nH L3 -- 10t #24 AWG .25"ID ~.5µH L4 -- VK200-4B ferrite choke 3µH R1- R3 -- 1kW 0.5Ω Carbon TL1 -- 38Ω t-line .175 x 1 in long C1 .45" from gate pin. DUT = ARF466A/B