ARF464A ADPOW | Alldatasheet
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MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS VDS (ON) IDSS IGSS gfs VGS (TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 (ID (ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7.5A) Gate Threshold Voltage (VDS = VGS , ID = 50mA) MIN TYP MAX 200 3.0 250 ±100 2 3.5 5 UNIT Volts µA nA mhos Volts Symbol VDSS VDGO ID VGS PD R qJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF464A/B 200 200 ±30 180 0.70 -55 to 150 300 UNIT Volts Amps Volts Watts °C/W RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation.
- Specified 65 Volt, 81.36 MHz Characteristics:
- Output Power = 100 Watts.
- Gain = 13dB (Class AB)
- Efficiency = 75% (Class C)
- Low Cost Common Source RF Package.
- Low Vth thermal coefficient.
- Low Thermal Resistance.
- Optimized SOA for Superior Ruggedness. TO-247 ARF464A ARF464B G D S Common Source CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency NOT UPDATED Class C VDD = 150V Pout = 150W GAIN (dB) PRELIMINARY DYNAMIC CHARACTERISTICS ARF464A/B Symbol C iss C oss C rss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 1.6W MIN TYP MAX 775 1000 340 480 150 230 61 2 91 8 13 20 3.4 10 UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol G PS h y Test Conditions f = 81.36 MHz VGS = 0V VDD = 65V Pout = 100W No Degradation in Output Power Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 MIN TYP MAX 13 15 70 75 UNIT dB
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein. 1 5 10 50 100 200 24 6 8 1 0 CAPACITANCE (pf) VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 3000 1000 500 100 .1 .5 1 5 10 50 150 ID , DRAIN CURRENT (AMPERES) VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID , DRAIN CURRENT (AMPERES) VDS > ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C TJ = -55°CTJ = +125°C TJ = +25°C TC =+25°C TJ =+150°C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) C iss C oss C rss 1mS 10mS 100mS DC
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.49 (.610) 16.26 (.640) 5.38 (.212) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Source 2-Plcs. Top View ARF - A Device ARF - B Gate Drain Source Source Drain Gate Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. C1R2 DUT C6C7 65V RF Output RF Input C1 -- 560pF NPO 50V chip mounted at gate lead C2-C3 -- Arco 424 Mica trimmer C4-C5 -- Arco 463 Mica trimmer C5-C8 -- 10nF 500V COG chip L2 -- 3t #16 AWG .25" ID .35"L ~68nH L3 -- 10t #18 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF464A/B